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Sliced method of polycrystalline silicon solar cell

A technology for solar cells and polysilicon, which is applied to fine working devices, stone processing equipment, manufacturing tools, etc., can solve the problems of low average conversion efficiency of solar cells and fine grains of silicon wafers, and achieves reduction of operation steps and improvement of minority carrier life. , the effect of eliminating negative effects

Inactive Publication Date: 2013-05-22
浙江向日葵大健康科技股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, our polycrystalline ingots (silicon ingots) are grown by direct melting and directional solidification. After the ingot is cast, the orientation of the grains is vertical to the crucible ground. The method of cross-cutting, that is, the whole ingot is developed into 25 ingots by vertical cutting, and then each ingot is cut into silicon wafers. The silicon wafers sliced ​​by this method have finer grains, and the average conversion efficiency of solar cells is low.

Method used

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Examples

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Embodiment 1

[0028] Example 1: A silicon ingot with a specification of 80 (length) × 80 (width) × 32 (height) cm is first cross-cut into two uniform upper and lower parts, that is, the size of each part is 80 (length) × 80 (width) )×16 (height) cm, and cut 4 horizontally and vertically at equal intervals to form 2×5=10 small ingots of equal volume, and finally cut each small ingot vertically and vertically with a multi-wire cutting machine to form several 6 inches of 0.18-0.22mm thick silicon wafers. The minority carrier lifetime of the silicon wafer is measured to be 21us. When it is made into a solar cell, the Voc of the solar cell is 626mv, the Isc is 8.64A, and the average conversion efficiency of the cell is 17.51%.

Embodiment 2

[0029] Example 2: A silicon ingot with a specification of 64 (length) × 64 (width) × 26 (height) cm is first cross-cut into two uniform upper and lower parts, that is, the size of each part is 64 (length) × 64 (width) )×13 (height) cm, and cut 4 horizontally and vertically at equal intervals to form 2×5=10 small ingots of equal volume, and finally cut each small ingot vertically and vertically with a multi-wire cutting machine to form several 5 pieces inches of 0.18-0.22mm thick silicon wafers. The minority carrier lifetime of the silicon wafer is measured to be 23us. When it is made into a solar cell, the Voc of the solar cell is 626mv, the Isc is 8.66A, and the average conversion efficiency of the cell is 17.52%.

Embodiment 3

[0030] Example 3: A silicon ingot with a specification of 48 (length) × 48 (width) × 32 (height) cm is first cross-cut into two uniform upper and lower parts, that is, the size of each part is 48 (length) × 48 (width) )×16 (height) cm, and then cut 2 horizontally and vertically at equal intervals to form 2×3=6 small ingots of equal volume, and finally cut each small ingot vertically and vertically with a multi-wire cutting machine to form several 6 inches of 0.18-0.22mm thick silicon wafers. The minority carrier lifetime of the silicon wafer is measured to be 20us, and it is made into a solar cell. The Voc of the solar cell is 625mv, the Isc is 8.63A, and the average conversion efficiency of the cell is 17.50%.

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Abstract

The invention relates to a sliced method of a polycrystalline silicon solar cell and belongs to the technical field of polycrystalline sliced technology. The sliced method of the polycrystalline silicon solar cell comprises the steps of first transversely cutting a silicon ingot, and then vertically cutting the silicon ingot. A silicon wafer crystalline grain which is obtained by using the method is of long striped shape. The whole crystalline grain is large in size and capable of effectively reducing compositing of manufactured cells. The minority carrier lifetime is more than 20us (The minority carrier lifetime of a common polycrystalline silicon solar silicon wafer is less than 10us). Average transfer efficiency of the solar cell reaches more than 17.50%. When slicing is conducted by using the method, a fixture does not need to be adjusted. When the fixture is placed, the phenomenon of breaking a silicon wafer cannot occur. A great number of unnecessary operations are avoided, possible negative effects made by the unnecessary operations on a silicon rod in the process of cutting are eradicated, operating steps of operators are reduced, and working efficiency of slicing is not affected.

Description

technical field [0001] The invention relates to a method for slicing polycrystalline silicon solar cells, and belongs to the technical field of slicing polycrystalline silicon. Background technique [0002] The energy issue is an important issue facing the development of all countries in the world today. Traditional energy sources such as oil and coal are facing the danger of depletion in the foreseeable future. Seeking alternative energy and ensuring the normal development of the social economy will be an important topic. The adjustment of the world's energy structure is already in progress. Among various new energy sources, solar energy is a clean and pollution-free renewable energy source, and it is an ideal energy source for human beings. . [0003] Solar energy is a broad concept, including water energy, wind energy, solar thermal and solar photovoltaic. Water energy is low-cost, mature and pollution-free, and has been widely used in my country. However, water energy ...

Claims

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Application Information

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IPC IPC(8): B28D5/04
Inventor 黄燕张强周国龙莫心龙
Owner 浙江向日葵大健康科技股份有限公司
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