Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing solution and method for polishing cadmium sulfide (CdS) wafer by applying same

A polishing liquid and wafer technology, which is applied to polishing compositions containing abrasives, grinding devices, grinding machine tools, etc., can solve the problems of poor polishing effect and large surface roughness of CdS single crystal, and achieve easy operation and cleaning. , the effect of small damage

Inactive Publication Date: 2013-03-06
CHINA ELECTRONICS TECH GRP NO 46 RES INST
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned analysis, the present invention aims to provide a polishing liquid and a polishing method for polishing a CdS wafer using the polishing liquid, in order to solve the problem that the surface roughness of the CdS single crystal after the CdS single crystal polishing treatment in the prior art is large and the polishing process is difficult. Bad effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing solution and method for polishing cadmium sulfide (CdS) wafer by applying same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The embodiment of the present invention provides a kind of polishing liquid for chemical mechanical polishing, and this polishing liquid comprises:

[0025] The polishing fluid comprises a polishing fluid for rough polishing and a polishing fluid for precise polishing; wherein:

[0026] The polishing liquid for the rough polishing comprises: 5-10wt% of nano-abrasives, 1.5-3wt% of an oxidant, 0.01wt% of a surfactant, a pH regulator, and the balance is deionized water, the particle size is 20-50nm, and the pH is 9.5;

[0027] The polishing liquid for fine polishing includes: 1-5wt% of nano-abrasives, 0.5-1.5wt% of oxidizing agent, 0.01wt% of surfactant, pH regulator, the balance is deionized water, particle size is 10-30nm, pH value is 9.5.

[0028] Wherein, the nano-abrasive includes silicon dioxide, or a mixture of silicon dioxide and cerium oxide, and when the nano-abrasive is silicon dioxide and cerium oxide, the weight ratio of silicon dioxide to cerium oxide is gr...

Embodiment 2

[0033] The embodiment of the present invention provides a kind of polishing liquid for chemical mechanical polishing, and this polishing liquid comprises:

[0034] The polishing fluid comprises a polishing fluid for rough polishing and a polishing fluid for precise polishing; wherein:

[0035] The polishing liquid for rough polishing includes: 5wt% silicon dioxide, 1.5wt% sodium hypochlorite, 0.01wt% fatty alcohol polyoxyethylene ether, pH regulator, the balance is deionized water, the particle size is 20nm, and the pH value is 9.5 ;

[0036] The polishing liquid for fine polishing includes: 1wt% of silicon dioxide, 0.5wt% of sodium hypochlorite, 0.01wt% of fatty alcohol polyoxyethylene ether, pH regulator, the balance is deionized water, the particle size is 10nm, and the pH value is 9.5 .

[0037] Wherein, the pH regulator includes an inorganic solution and an organic solution, the volume ratio of the inorganic solution to the organic solution is 1:1, the inorganic solutio...

Embodiment 3

[0040] The embodiment of the present invention provides a kind of polishing liquid for chemical mechanical polishing, and this polishing liquid comprises:

[0041] The polishing fluid comprises a polishing fluid for rough polishing and a polishing fluid for precise polishing; wherein:

[0042] The polishing liquid for the rough polishing includes: 10wt% of silicon dioxide, 3wt% of sodium hypochlorite, 0.01wt% of polyoxyethylene amide, a pH regulator, and the balance is deionized water, the particle size is 50nm, and the pH value is 9.5;

[0043] The polishing liquid for fine polishing includes: 5wt% of silicon dioxide, 1.5wt% of sodium hypochlorite, 0.01wt% of polyoxyethylene amide, pH regulator, the balance is deionized water, the particle size is 30nm, and the pH value is 9.5.

[0044] The pH regulator includes an inorganic solution and an organic solution, wherein the volume ratio of the inorganic solution to the organic solution is 1:5, the inorganic solution is potassium ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a polishing solution used for chemico-mechanical polishing, which comprises polishing solution for rough polishing and polishing solution for fine polishing, wherein the polishing solution for rough polishing comprises 5-10wt% of nano grinding material, 1.5-3wt% of oxidant, 0.01wt% of surface active agent, pH regulator and the balance of deionized water, and has the particle size of 60-100nm and the pH value of 9.5; the polishing solution for fine polishing comprises 1-5wt% of nano grinding material, 0.5-1.5wt% of oxidant, 0.01wt% of surface active agent, pH regulator and the balance of deionized water, and has the particle size of 15-30nm and the pH value of 9.5; and the invention also relates to a method for carrying out chemico-mechanical polishing on a cadmium sulfide (CdS) wafer by applying the polishing solution, which comprises the steps of: carrying out rough polishing on the CdS wafer to be polished by the polishing solution for rough polishing, and then carrying out fine polishing on the CdS wafer by the polishing solution for fine polishing after rough polishing, wherein during the rough polishing and the fine polishing, the polishing pressure is 60-120g / cm<2>, the rotating speed is 60-100r / min, and the flow rate of the corresponding polishing solution is 50-200ml / min. The invention is simple in polishing technology, easy in operation and less in damage caused by the used polishing solution.

Description

technical field [0001] The invention relates to the technical field of crystal material processing, in particular to a polishing liquid and a polishing method for polishing a CdS wafer by using the polishing liquid. Background technique [0002] Group II-VI single crystal materials are excellent detector materials and laser materials, and CdS is a direct leap into Group II-VI compound semiconductors. It is a better window material and transition layer material, and is often used to make photochemical catalysis and semiconductor devices. , light emitting devices, lasers and photosensitive sensors. CdS can be used to make ultraviolet detectors and is a good infrared window material, so it is used for infrared or ultraviolet dual-color guidance of missiles. Therefore, the research on CdS single crystal material has high application prospect and military significance. [0003] The surface quality of CdS single crystal is closely related to the performance of its devices, but t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02B24B37/04
Inventor 李晖徐永宽程红娟
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com