Composite dielectric grating metal-oxide-semiconductor field effect transistor (MOSFET) based dual-transistor light-sensitive detector and signal reading method thereof

Abstract

The invention discloses a composite dielectric grating MOSFET based dual-transistor light-sensitive detector. Each of the unit detectors comprises two transistors, wherein the two transistors comprise a photoreceptive transistor and a reading transistor which are used for implementing the photoreceptive function and the reading function respectively, both of the two transistors are formed above a composite dielectric grating MOSFET substrate P-type semiconductor material (1) and are separated through shallow trench isolation (STI), a bottom layer of an insulating dielectric material, a top layer of the insulating dielectric material and a control grid (2) are arranged above the substrate P-type semiconductor material respectively, a photoelectron storage layer (4) is arranged between the two layers of insulating dielectric materials, a source / drain electrode is arranged on the reading transistor to read signals, and the two transistors are connected through the photoelectron storage layer, so that the reading transistor can read photoelectrons which are stored by the photoreceptive transistor in the photoelectron storage layer through sensitization.

Description

technical field [0001] The invention relates to imaging detection devices, especially the structure, working mechanism and signal readout of imaging detection devices from infrared, visible light to ultraviolet bands. It is a dual-transistor photosensitive detector based on a composite dielectric gate MOSFET and its signal Read method. Background technique [0002] Imaging detectors are widely used in various fields such as military and civilian use. The main imaging detectors currently developed are CCD and CMOS-APS. CCD appeared earlier and the technology is relatively mature. Its basic structure is a series of MOS capacitors connected in series The generation and change of the semiconductor surface potential well is controlled by the voltage pulse sequence on the capacitor, and then the storage and transfer readout of the photogenerated charge signal is realized. It is precisely because of this signal transfer characteristic that the charge transfer speed is very limited,...

AI Technical Summary

Problems solved by technology

However, each pixel of CMOS-APS is composed of multiple transistors and a photosensitive diode (including amplifier and A / D conversion circuit), so that the photosensitive area of ​​each pixel only occupies a small surface area of ​​the pixel itself, and the sensitivity and resolution are relatively small.

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