Silicon-controlled rectifier lateral double diffused metal oxide semiconductor with high maintaining voltage

Abstract

A silicon-controlled rectifier lateral double diffused metal oxide semiconductor with high maintaining voltage comprises an N-type substrate. Buried oxide is arranged on the N-type substrate, an N-type epitaxial layer is arranged on the buried oxide, an N-type buffer trap and a P-type body region are arranged in the N-type epitaxial layer, a P-type anode region and an N-type contact region are arranged in the N-type buffer trap, an N-type cathode region and a P-type body contact region are arranged in the P-type body region, a gate oxide layer and a field oxide layer are arranged on the surface of the N-type epitaxial layer, a shallow P-type trap region is arranged on the surface of the N-type cathode region and the surface of the P-type body contact region, and a polysilicon gate is arranged on the surface of the gate oxide layer. The silicon-controlled rectifier lateral double diffused metal oxide semiconductor is characterized in that a deep N-type trap region is arranged under the P-type anode region and the N-type body contact region, a deep P-type trap region is arranged under the shallow P-type trap region, and a carrier double-injection effect can be effectively suppressed by the shallow P-type trap region and the deep P-type trap region, so that the quantity of neutralized free carriers in a drift region is reduced. Accordingly, the maintaining voltage of a device is improved, and risks of breech lock in an electrostatic release process are reduced.

Description

technical field [0001] The invention mainly relates to the reliability field of high-voltage power semiconductor devices, specifically, a high-maintenance voltage thyristor lateral double-diffused metal oxide semiconductor transistor with high sustain voltage and strong anti-latch capability. It is suitable for electrostatic protection of driving chips in plasma flat panel display equipment, half bridge driving circuits and automobile production fields. Background technique [0002] With the increasing demand for energy saving, the performance of high-voltage power integrated circuit products has received more and more attention, and the reliability of the circuit has also attracted more and more attention from circuit design engineers. Electrostatic discharge is a very important reliability issue, and it is also one of the main causes of failure of many electronic products. With the continuous shrinking of process feature size, electronic products are more vulnerable to el...

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Problems solved by technology

[0005] However, the thyristor lateral double-diffused metal oxide semiconductor tube is facing a very serious reliability risk when discharging static electricity. The main problem is that there is a double injection of carriers in its anode and cathode when discharging static electricity. Effect, so that a quasi-neutral region is formed in the drift region due to the large amount of neutralization of electrons and holes, so the maintenance voltage of the thyristor lateral double-diffused metal oxide semiconductor transistor is very low, far lower than the power supply voltage of the circuit, There is a great hidden danger of latch-up, which has caused great restrictions on the design and application of silicon controlled silicon lateral double-diffused metal oxide semiconductors in the electrostatic protection of high-voltage power integrated circuits

Therefore, in order to use silicon controlled silicon lateral double-diffused metal oxide semiconductor transistors as electrostatic protection devices, it is necessary to improve the device structure to solve the problem that the design can realize the electrostatic discharge protection function without the risk of latch-up on a smaller area

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