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A method of manufacturing a thin film transistor driving backplane

A thin-film transistor and drive backplane technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high production cost, complicated manufacturing process, unfavorable promotion and use, etc., achieve stable performance and reduce interface pollution problems , Reduce the production cost and the effect of process difficulty

Active Publication Date: 2014-10-01
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing process of existing metal oxide semiconductor materials is complicated and the production cost is high, which is not conducive to the popularization and use of metal oxide semiconductor materials in the production of drive backplanes.

Method used

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  • A method of manufacturing a thin film transistor driving backplane
  • A method of manufacturing a thin film transistor driving backplane
  • A method of manufacturing a thin film transistor driving backplane

Examples

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specific example 2

[0129] Such as image 3 shown, in a case with a 50nm thick Si 3 N 4 layer as the buffer layer 2 on the alkali-free glass substrate 1, use PVD to deposit Cu metal film as the grid, the lower electrode of the capacitor and the signal wire, the thickness is 100nm. It is patterned to form the metal layer 3 using a photolithography process. Such as Figure 4 On the patterned gate metal, 100nm of Al was deposited using ALD 2 o 3 as the gate insulating layer 4 . Then PVD is used to deposit metal oxide IGZO (In, Ga, Zn atomic ratio 1:1:1) as the active layer 5 with a thickness of 50 nm. Such as Figure 5 As shown, the Ruihong 304 photoresist 10 is used, and the gate metal pattern is used for self-alignment exposure and development. Such as Figure 14As shown, the active layer 5 is etched using dilute hydrofluoric acid. Then, ALD is used to fabricate Al with a thickness of 50nm 2 o 3 as an etch stop layer 6. The positive photoresist 11 is exposed and developed using a gray...

specific example 3

[0131] Such as image 3 shown, in a SiO with 200nm thick 2 On the non-alkali glass substrate 1 of the buffer layer 2, a Mo metal thin film is deposited by PVD as the gate, the lower electrode of the capacitor and the signal wire, with a thickness of 200nm. It is patterned to form the metal layer 3 using a photolithography process. Such as Figure 4 As shown, on the patterned gate metal, using a combination of PECVD and PVD equipment, under the condition of maintaining a high vacuum, use PECVD to continuously deposit Si with a thickness of 150nm 3 N 4 and 50nm SiO 2 As the gate insulating layer 4, 50 nm of metal oxide IZO (In, Zn atomic ratio 1:1) was deposited as the active layer 5 using PVD. Such as Figure 5 As shown, the Ruihong 304 photoresist 10 is used, and the gate metal pattern is used for self-alignment exposure and development. Such as Figure 6 As indicated, dilute hydrofluoric acid (HF:H 2 O=1:100) to etch the active layer 5, using dry etching equipment, u...

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Abstract

An embodiment of the invention discloses a manufacture method of a thin film transistor driving rear panel. The manufacture method is used for efficiently using a metal-oxide semiconductor material to manufacture the thin film transistor driving rear panel. The embodiment comprises preparing and imaging a metal conducting layer; sequentially depositing insulating films and metallic oxide films on the metal conducting layer to respectively serve as gate insulation layers and active layers; imaging the active layers according to shapes of the metal conducting layer; depositing the insulating films on the active layers to serve as corrosion stopping layers; using a gray level mask plate imaging process, preparing contact holes on the gate insulation layers and imaging the corrosion stopping layers, and defining source and drain electrode area of a thin film transistor and active area of storage capacitance; and depositing and imaging a conductive thin film layer on the corrosion stopping layers.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a metal oxide semiconductor thin film transistor. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor) is currently mainly used to drive sub-pixels of Liquid Crystal Display (LCD, Liquid Crystal Display) and Organic Light-Emitting Diode (OLED, Organic Light-Emitting Diode) displays. The driving backplane made of thin-film transistor array is a key component for the display to achieve higher pixel density, aperture ratio and increase brightness. At present, TFT-LCD generally adopts a TFT backplane based on amorphous silicon as an active layer. However, due to the low mobility of amorphous silicon (a-Si) (0.1cm 2 V -1 the s -1 left and right), which cannot meet the requirements of OLED display, high-definition TFT-LCD and 3D display. As the active layer material of thin film transistors, metal oxide semiconductors are regarded ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77
Inventor 徐苗彭俊彪罗东向王磊兰林锋
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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