Infrared detector manufacturing method based on compound sacrificial layers
A technology of infrared detector and composite sacrificial layer, applied in the field of infrared detector, can solve the problems of peeling, inability to achieve planarization, poor adhesion of metal layer, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0068] Figure 2 is figure 1 The flow chart of the first processing method of the infrared detector is shown. The infrared detector processing method of the present invention will be described in detail below in conjunction with FIG. 2 , and the present invention will be further described.
[0069] 2(a), fabricating and patterning the metal layer 12 on the substrate 11 to form an infrared reflection layer and an electrical connection with CMOS. Wherein, the substrate 11 is a silicon wafer that has been processed with CMOS circuits. One of Ti / TiN / Al (alloy including Al), TiW / Al (alloy including Al), and Ta / TaN / Al (alloy including Al) is used for the metal reflective layer 12 . The thickness of the control metal layer 12 is between 1000A~10000A.
[0070] 2(b), making a first sacrificial layer 13 of polyimide on the metal layer 12, which is prepared by a spin-coating method. In this embodiment, the polyimide is photosensitive, and through-holes 101 are formed by exposure and d...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com