Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nanocomposite dielectric film

A dielectric film and nanocomposite technology, applied in chemical instruments and methods, components of fixed capacitance, circuits, etc., can solve the problem of small dielectric constant, inconvenient miniaturization of capacitors, and inability to meet the requirements of military high energy storage density capacitors, etc. question

Inactive Publication Date: 2014-07-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The polytetrafluoroethylene film is produced by DuPont of the United States. The dielectric constant is relatively small, and the film thickness can only reach 12.7 μm at present. It is not convenient to realize the miniaturization of capacitors, and it is also difficult to meet military needs.
Polyimide film is also produced by an American company, with a dielectric constant of only 3.4, and the film is prone to breakdown, and the price is expensive, which cannot meet the requirements of military high energy storage density capacitors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nanocomposite dielectric film
  • Method for preparing nanocomposite dielectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Polyvinylidene fluoride (PVDF) polymer dielectric materials are dissolved in organic solvents such as dimethyl sulfoxide to form a well-dispersed solution of PVDF. Barium titanate (BaTiO 3 ) nanoparticles and conductive polymer poly-3,4-ethylenedioxythiophene (PEDOT) nanoparticles are mixed and dissolved in organic solutions such as chloroform to form two well-dispersed solutions of nanoparticles. The obtained dispersion solution was dripped onto the surface of ultrapure water in different tanks of the LB membrane using a microsampler, so that PVDF and nanoparticles spread on the surface of ultrapure water. Control the sliding barrier of the LB film groove ( figure 1 2 and 4) respectively compress the PVDF and nanoparticles in the groove to the film-forming pressure to obtain a tightly arranged PVDF film ( figure 1 7) and nanoparticle films ( figure 1 Medium 8). The PVDF dielectric nano-thin film was first prepared on the substrate by the method of LB film horizonta...

Embodiment 2

[0067] Such as figure 2 , the nano particle material is barium titanate and polypyrrole.

[0068] The preparation process of the nanocomposite dielectric film is similar to that of Embodiment 1. Since the nanoparticle materials are barium titanate and polypyrrole, PVDF-BaTiO 3 / Polypyrrole nanoparticles-PVDF composite nano-dielectric film structure.

Embodiment 3

[0070] Such as figure 2 , the nano particle material is barium titanate and polyaniline.

[0071] The preparation process of the nanocomposite dielectric film is similar to that of Embodiment 1. Since the nanoparticle materials are barium titanate and polypyrrole, PVDF-BaTiO 3 / Polyaniline nanoparticles-PVDF composite nano-dielectric film structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
breakdown field strengthaaaaaaaaaa
energy densityaaaaaaaaaa
energy densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a nanocomposite dielectric film. First, a polymer dielectric film is obtained by a Langmuir-Blodgett (LB) film method, and then a high dielectric inorganic / The organic composite nanoparticle film is finally prepared on the composite nanoparticle film by the LB film method to prepare a polymer dielectric film, thereby forming a high dielectric composite film material in which nanoparticles are dispersed in the polymer. The polymer-nano particle composite dielectric film material prepared by the method overcomes the defects in the prior art, and the preparation method is reasonable and simple, and is easy to operate.

Description

Technical field [0001] The present invention involves the field of electronic materials and components, and specifically involves preparing methods based on a composite nanogenic structure. Background technique [0002] High Energy Density Capacitor is widely used in the field of missiles and space, mainly used in new electromagnetic pulse weapons (electromagnetic bombs and electromagnetic cannons) and electromagnetic energy weapons (electromagnetic rail cannons and electromagnetic armor -piercing weapons), and standard molecules.Laser weapons, particle beam accelerators, high -power microwave sources, X -ray sources and other new concept weapons and strategic ballistic missiles, electromagnetic armor, etc.Due to the embargo of the United States such as high -energy storage density capacitors, the development of my country's new electromagnetic energy weapons has been restricted. [0003] In high -storage density capacitors, the shape and performance of the medium materials used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B32B37/02B32B27/08B32B27/18B32B27/28B32B27/30C08J5/18H01G4/18
CPCH01G4/206
Inventor 杨亚杰蒋亚东徐建华杨文耀
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com