Rare-earth-doped chalcogenide (halogen) thin film material, preparation method and application

Abstract

The invention relates to a rare-earth-doped chalcogenide (halogen) thin film material. Two types of rare earth ions, namely trivalent rare earth ion thulium Tm 3 plus and dysprosium Dy 3 plus, are co-doped in a germanium-gallium-based chalcogenide (halogen) thin film; the thin film material is amorphous; the optical active thin film material with near-infrared multi-band emission characteristic is formed; the chemical compositin of the thin film material is basically kept consistent with a glass block body target material, and a glass base target material comprises 72mol% of GeS2, 18mol% of Ga2S3 and 10mol% of CdI2, and the doping concentration of each of the Tm 3 plus and the Dy 3 plus is 1.0 plus or minus 0.2% by weight and 0.4 plus or minus 0.1% by weight of the weight of the glass base target material respectively. High-bandwidth emission of a thin film sample can be realized under pumping of a laser diode in the wavelength of 808nm. The amorphous chalcogenide (halogen) thin film material obtained by the preparation method disclosed by the invention has the advantages of uniform components and easiness in control; and the preparation parameters of the material are easy to adjust.

Description

technical field [0001] The invention belongs to the fields of optical communication technology and laser medicine technology, and in particular relates to a rare earth ion co-doped chalcogenide (halogen) thin film material, a film growth method of pulse laser deposition and optical application in the near-infrared band. It also belongs to the fields of rare earth doped optical amplification materials and laser materials. Background technique [0002] In recent years, broadband optical fiber amplifiers and Dense Wavelength Division Multiplexing (DWDM) technology have been widely used in large-capacity, high-speed, long-distance optical fiber communications to meet users' increasing demand for bandwidth. Therefore, developing a miniaturized broadband waveguide optical amplifier with simple structure and low cost is one of the core technologies for realizing all-optical communication. Most of the optical amplifiers studied at home and abroad focus on the Erbium-doped silica fi...

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Problems solved by technology

[0003] Generally, due to the small energy gap between the upper energy level and the nearest neighbor lower energy level of the rare earth ion emission corresponding to the low-loss near-infrared band of the fiber, these near-infrared emissions are weaker in the parent material with high phonon energy, Even quenching, energy level life is short, quantum efficiency is low, so it is necessary to find a parent material with characteristics such as large refractive index, large stimulated emission cross section, low phonon energy, high solubility of rare earth ions and excellent infrared transmission properties.

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