Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photosensitive Resin Composition

A technology of photosensitive resin and composition, which is applied in optics, optomechanical equipment, instruments, etc., can solve the problem of charge mobility decline, and achieve the effect of excellent resistance to change over time and high transparency

Inactive Publication Date: 2012-07-18
ADEKA CORP
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, plastic films such as polycarbonate and polyethylene terephthalate cannot be used as substrates
As a photosensitive resin composition capable of photolithography and capable of obtaining an insulating film with high insulation properties, a photosensitive resin composition containing a polysiloxane compound having an epoxy group and a photoacid generator is known, but by such a photosensitive resin composition The insulating film obtained from the permanent resin composition has the problem of lowering the charge mobility because the hydroxyl group generated by the ring-opening of the epoxy group captures the carriers formed in the semiconductor layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photosensitive Resin Composition
  • Photosensitive Resin Composition
  • Photosensitive Resin Composition

Examples

Experimental program
Comparison scheme
Effect test

manufacture example A

[0092] [Production Example A: Production of Polysiloxane Compound A]

[0093] Add 124.2 g (0.5 moles) of 3-methacryloxypropyltrimethoxysilane, 39.7 g (0.2 moles) of phenyltrimethoxysilane, dimethyl 132.2 g (1.1 mol) of dimethoxysilane, 75.3 g (0.2 mol) of diphenyldimethoxysilane, and 300 g of 1-butanol as a solvent. After stirring and heating to 70° C., 100 parts of 0.12% phosphoric acid aqueous solution was added dropwise, and then reacted at 80° C. for 1 hour. Next, an aqueous sodium hydroxide solution was added to neutralize the reaction liquid, followed by reaction at 80° C. for 1 hour. After adding 300 g of toluene, stirring was stopped, and the separated water-containing layer was removed. After washing the toluene layer with 1000 g of water three times, the solvent was distilled off under reduced pressure at 40° C. under a nitrogen stream. 300 g of triethyl orthoformate was added thereto, and after treatment at 130° C. for 1 hour, volatile components such as unreacte...

manufacture example B~I

[0094] [Production Examples B to I: Production of Polysiloxane Compounds B to I]

[0095] In manufacture example A, except having used the alkoxysilane compound shown in Table 1, operation similar to manufacture example A was performed, and polysiloxane compound B-I shown in Table 1 was synthesize|combined. The numerical values ​​in the table represent the reaction molar ratios of the alkoxysilane compounds. Among the polysiloxane compounds in Table 1, polysiloxane compounds A to E are polysiloxane compounds of the present invention, and polysiloxane compounds F to I are comparative polysiloxane compounds. In addition, Table 2 shows the analysis results of the mass average molecular weight and the silanol group content.

[0096] Table 1

[0097] polysiloxane compound

A

B

C

D

E

F

G

H

I

3-Methacryloxypropyltrimethoxysilane

25

25

25

15

15

-

-

-

-

Ph...

Embodiment 1~7 and comparative example 1~5

[0101] Using polysiloxane compounds A to I, the following acrylates A and B, and bis(2,6-dimethoxybenzoyl)phenylphosphine oxide (hereinafter referred to as photo Radical generator 1), 1-hydroxycyclohexyl phenyl ketone (hereinafter referred to as photoradical generator 2), [4-(2-chloro-4-benzoylphenylthio) as a photoacid generator Phenylbis(4-chlorophenyl)sulfonium hexafluoroantimonate], platinum-divinyltetramethyldisiloxane complex as hydrosilylation catalyst, and butyl acetate as solvent, according to the table Composition of 3. The photosensitive resin composition or thermosetting resin composition of Examples 1-7 and Comparative Examples 1-5 were prepared.

[0102]

[0103] Acrylate A

[0104]

[0105] Acrylate B

[0106] table 3

[0107]

[0108]

[0109] In order to evaluate the characteristics of the photosensitive resin composition or thermosetting resin composition obtained in the above-mentioned examples and comparative examples as a gate insulating film...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a photosensitive resin composition-that can form a minute pattern by means of photolithography, can form a insulating film without heat treatment above 200 DEG C, and has no problems of carrier being trapped and charge mobility decreasing when used as a gate insulating film of an organic thin-film transistor-containing a photo-radical generating agent and a polysiloxane compound having units represented by the belowmentioned general formulae (1-4). (In formula 1, R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group having a carbon number of 1-5 that may have a substituent alkyl group. In formula 2, R3 represents a hydrogen atom or an alkyl group having a carbon number of 1-4. In formula 3, R4 represents an alkyl group having a carbon number of 1-6 or a cycloalkyl group having a carbon number of 5-6. In formula 4, R5 represents a hydrogen atom or an alkyl group having a carbon number of 1-4.)

Description

technical field [0001] The present invention relates to a photosensitive resin composition using a polysiloxane compound, and further relates to a negative photoresist (especially a permanent resist) using the photosensitive resin composition. Background technique [0002] In recent years, research on display devices such as liquid crystal display devices and EL display devices has been extensively carried out, and electronic paper has attracted attention as one of display devices that can be driven with low power consumption. Electronic paper can be made as thin as paper, has the advantages of low power consumption and the ability to retain images even when the power is cut off, and is expected to be used in electronic books and posters. It is believed that if a plastic film is used for the display substrate of electronic paper and an organic thin film transistor is used for the driving part of the display device, it will be flexible and can display without loss of quality ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075C08F299/08C08G77/14C08G77/20C08L83/04H01L21/027
CPCC08G77/20C08G77/80G03F7/027C08F283/12C08F283/124C08F299/08C08K5/56G03F7/0757G03F7/032
Inventor 原宪司
Owner ADEKA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products