Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive photosensitive composition and permanent resist

A photosensitive composition and resist technology, applied in the direction of photosensitive material processing, optics, light source, etc., can solve the problems of insufficient heat resistance and chemical resistance, and achieve high transparency and excellent resistance to changes over time. Effect

Inactive Publication Date: 2012-12-26
ADEKA CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] On the other hand, silicone resins are excellent in transparency, insulation, heat resistance, and chemical resistance, and photoresists using silicone resins as the main agent are known. The heat resistance of the resist and the chemical resistance after the high heat process are not sufficient, so it is only used as a planarizing film on the surface of the active matrix substrate (for example, refer to Patent Document 5)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive photosensitive composition and permanent resist
  • Positive photosensitive composition and permanent resist
  • Positive photosensitive composition and permanent resist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～11 and comparative example 1～16

[0261] [Examples 1-11 and Comparative Examples 1-16] Preparation of positive photosensitive composition

[0262] The positive photosensitive composition of Examples 1-11 and Comparative Examples 1-16 was prepared after mixing with the ratio shown in [Table 1], and filtering with the filter whose pore diameter is 0.2 micrometers. In addition, additional solvents were added so as to achieve the values ​​in the table.

[0263] [Table 1]

[0264]

[0265] Solvent PGMEA: 1-methoxy-2-propanol acetate

[0266] DAA: diacetone alcohol

[0267] GBL: gamma-butyrolactone

[0268] The following evaluation was performed about the positive photosensitive composition of Examples 1-11 and Comparative Examples 1-16. The results are shown in [Table 2].

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A positive photosensitive composition which comprises (A) a silicone resin bearing, in one molecule, at least two groups represented by general formula (1) [wherein R1 is a C1-10 alkylene group which may have a substituent hydrocarbon group; R2 is a C1-4 alkyl group; a is a number of 0 or 1 to 4; and b is a number of 1 to 3, with the proviso that the sum of a and b does not exceed 5], (B) a siloxane compound bearing a glycidyl group, (C) a diazonaphthoquinone, and (D) an organic solvent.  The permanent resist is produced by applying the positive photosensitive composition to a substrate, exposing the coated substrate to light, and then subjecting the resulting coated substrate to alkali development and then to post-baking at 120 to 350°C.

Description

technical field [0001] The present invention relates to a positive photosensitive composition using a polysiloxane compound, and also to a permanent resist and a method for producing a permanent resist using the positive photosensitive composition. Background technique [0002] With the development of an information society and the spread of multimedia systems, the importance of liquid crystal display devices, organic EL display devices, and the like is gradually increasing. In these display devices, an active matrix substrate including switching elements such as thin film transistors (TFTs) is used for each pixel. [0003] A large number of scanning lines and signal lines crossing the scanning lines through an insulating film are formed on the active matrix substrate. The scanning wiring, signal wiring, insulating film, etc. of the active matrix substrate are formed by repeatedly patterning the conductive film or insulating film formed by the sputtering method, CVD method,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075C08G77/16G02F1/1333G03F7/023G03F7/40H01L21/027H01L51/50H05B33/22
CPCG03F7/0757H05B33/10G03F7/40H05B33/22G03F7/0233C08G77/18C08G77/16
Inventor 斋藤诚一森田博竹之内宏美小林纯尾见仁一
Owner ADEKA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com