Band gap tunable copper zinc tin sulfur semiconductor film and preparation method thereof
A copper-zinc-tin-sulfur and semiconductor technology, which is applied in the field of adjustable band gap copper-zinc-tin-sulfur semiconductor films and their preparation, can solve the problem that the crystal quality and structural properties of the films cannot be optimized, and it is difficult to obtain high-quality copper-zinc-tin-sulfur films. It can improve the photoelectric conversion efficiency, reduce the infiltration of harmful gases, and achieve good compactness.
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[0031] A preparation process for an adjustable bandgap copper-zinc-tin-sulfur semiconductor thin film, the process is as follows:
[0032] 1) Clean the substrate substrate
[0033] Using a glass slide as the substrate, first use ammonia water (the ammonia content is 27wt%), 30wt% hydrogen peroxide solution and water at a volume ratio of 0.5:1:5, and then ultrasonically clean the No. 1 cleaning solution obtained after mixing Clean for 5 minutes, then wash with deionized water for 3 times, then use the volume ratio of 36.5wt% hydrochloric acid, 30wt% hydrogen peroxide solution and water to mix the obtained No. 2 cleaning solution for ultrasonic cleaning for 5 minutes, Then wash 3 times with deionized water, and store the cleaned slides in 75% alcohol solution for later use.
[0034] 2) Preparation of layered metal thin film precursor
[0035] Put 99.99% and above purity powder or flake or wire copper, zinc and tin metals in different tungsten boats, and conduct thermal evapora...
Embodiment 1
[0039] Example 1 (Cu 2.1 Zn 1.05 SnS 4 )
[0040] Take copper powder (10.9mg), zinc powder (5.5mg) and tin powder (9.6mg) and place them in three tungsten boats respectively, and conduct thermal evaporation deposition of the metal layer on a vacuum coating machine. The order of evaporation deposition is Cu-Zn- Sn metal layer, to obtain a layered metal thin film precursor deposited on a glass slide.
[0041] Put the above glass slide and sufficient amount of sulfur powder in a vacuum furnace to heat, first raise the temperature to 400 °C for 60 min, then keep it warm for 2 h, and finally obtain a copper-zinc-tin with a thickness of 1 μm and an optical band gap of 1.51 eV. Sulfur semiconductor thin films.
[0042] figure 1It is the XRD figure of embodiment 1 and comparative example semiconductor thin film, there are three curves in the figure, is respectively curve 3, curve 2, curve 1 from top to bottom, and curve 1 is the XRD figure of embodiment 1 semiconductor thin fil...
Embodiment 2
[0043] Example 2 (Cu 2.4 Zn 0.95 SnS 4 )
[0044] Take copper wire (12.1mg), zinc sheet (5.5mg) and tin wire (9.6mg) and place them in three tungsten boats, and conduct thermal evaporation deposition of metal layers on a vacuum coating machine. The order of evaporation deposition is Cu-Sn- The Zn metal layer was deposited on a glass slide to obtain a layered metal thin film precursor.
[0045] Put the above glass slide and sufficient amount of sulfur powder in a vacuum furnace to heat, first raise the temperature to 300 ℃ for 60 minutes, and then keep it warm for 2 hours, finally get the adjustable bandgap copper-zinc with a thickness of 1.1μm and an optical bandgap of 1.2eV Tin-sulfur semiconductor thin films.
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