Silicon wafer polishing composition and preparation method thereof

Abstract

The invention discloses a silicon wafer polishing composition and a preparation method thereof, and belongs to the field of chemically mechanical polishing (CMP). The silicon wafer polishing composition contains a grinding material, one or more alkaline compounds, 0.001 to 5 wt% of one or more water-soluble polymers, deionized water, 0.001 to 1 wt% of one or more polymer bridging agents and 0.001 to 0.5 wt% of one or more frictional factor conditioning agents, wherein the pH value of the silicon wafer polishing composition is in a range of 8 to 12. The silicon wafer polishing composition is especially suitable for silicon wafer polishing, can improve the stability of a polymer in slurry, can adjust a frictional factor between a silicon wafer surface and a polishing pad, can effectively inhibit the deposition of particles and a polymer, can reduce the scratches on the surface of a silicon wafer, can improve the uniformity of the quality of a polished silicon wafer surface, and can be washed away easily.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing (CMP), in particular to a polishing composition for fine polishing of silicon wafers and a preparation method thereof. Background technique [0002] Integrated circuit (IC) is the technical basis of the information industry and the core driving force for the development of high-tech. Chemical mechanical polishing technology can effectively take into account the global and local flatness of the processed surface. In the manufacture of VLSI, this technology is widely used to process single crystal silicon substrates. [0003] A traditional CMP system consists of the following three parts: a rotating silicon wafer holding device, a workbench carrying a polishing pad, and a polishing liquid (slurry) supply system. During polishing, the rotating workpiece is applied with a certain pressure on the polishing pad that rotates with the worktable. The polishing liquid flows between the workpiec...

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Problems solved by technology

[0009] The above methods have achieved certain effects in controlling the surface defects of silicon wafers, but for the higher requirements of single crystal silicon polishing, the above methods still have problems in further controlling surface defects, residues, improving wafer surface uniformity and reducing friction coefficient. Certain limitations

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