Method for preparing antioxidant SiC coating on surface of graphite material
A graphite material, anti-oxidation technology, applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of poor bonding ability, affecting the anti-oxidation ability of the coating, high equipment requirements, etc., and achieve thermal shock resistance Excellent high temperature oxidation resistance, good high temperature oxidation resistance, good compactness and uniformity
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Embodiment 1
[0021] Step 1: Preparation of silicon target material: Weigh 400g of silicon powder with a purity of 99.9%, add 50ml of PVA binder with a concentration of 30% by weight and mix evenly. The silicon target was obtained by drying at ℃.
[0022] Step 2: SiO 2 Grinding and polishing with sandpaper, ultrasonic cleaning in absolute ethanol, finally rinsing with deionized water, and drying for later use;
[0023] Step 3: Using ultra-high vacuum multifunctional magnetron sputtering coating equipment, place the silicon target prepared in step 1 on the radio frequency sputtering cathode in the coating chamber as a sputtering target, and install the graphite base material obtained in step 2 on the substrate holder in the sampling chamber.
[0024] Step 4: Vacuum the coating chamber and sample chamber to a vacuum degree of less than or equal to 10 -4 After Pa, high-purity Ar gas with a purity of 99.99% is passed into it. Ar gas is introduced into the vacuum coating chamber by the gas f...
Embodiment 2
[0027] Step 1: Preparation of silicon target material: Weigh 400g of silicon powder with a purity of 99.9%, add 50ml of PVA binder with a concentration of 35% by weight and mix evenly. The silicon target was obtained by drying at ℃.
[0028] Step 2: SiO 2 Grinding and polishing with sandpaper, ultrasonic cleaning in absolute ethanol, finally rinsing with deionized water, and drying for later use;
[0029] Step 3: Using ultra-high vacuum multifunctional magnetron sputtering coating equipment, place the Si target prepared in step 1 on the radio frequency sputtering cathode in the coating chamber as a sputtering target, and install the graphite matrix material obtained in step 2 on the substrate holder in the sampling chamber.
[0030] Step 4: Vacuum the coating chamber and sample chamber until the background vacuum is less than or equal to 10 -4 After Pa, high-purity Ar gas with a purity of 99.99% is passed into it. Ar gas is introduced into the vacuum coating chamber by the...
Embodiment 3
[0033] Step 1: Preparation of silicon target material: Weigh 400g of silicon powder with a purity of 99.9%, add 50ml of PVA binder with a concentration of 40% by weight and mix evenly. The silicon target was obtained by drying at ℃.
[0034] Step 2: SiO 2 Grinding and polishing with sandpaper, ultrasonic cleaning in absolute ethanol, finally rinsing with deionized water, and drying for later use;
[0035] Step 3: Using ultra-high vacuum multifunctional magnetron sputtering coating equipment, place the Si target prepared in step 1 on the radio frequency sputtering cathode in the coating chamber as a sputtering target, and install the graphite matrix material obtained in step 2 on the substrate holder in the sampling chamber.
[0036] Step 4: Vacuum the coating chamber and sample chamber until the background vacuum is less than or equal to 10 -4 After Pa, high-purity Ar gas with a purity of 99.99% is passed into it. Ar gas is introduced into the vacuum coating chamber by the...
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