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Preparation method of carbon-based nanometer material transistor

A carbon-based nanomaterial, carbon nanotube technology, applied in the field of nanofabrication, can solve problems such as unstable device performance

Inactive Publication Date: 2012-02-15
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under the trend of scaling down of traditional silicon-based integrated circuits, device performance is unstable due to quantum size effects and tunneling effects

Method used

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  • Preparation method of carbon-based nanometer material transistor
  • Preparation method of carbon-based nanometer material transistor
  • Preparation method of carbon-based nanometer material transistor

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Embodiment Construction

[0022] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0023] (1) First in Si / SiO 2 Orientately grow carbon nanotubes on top, and use palladium (Pd) to lead out electrodes from both ends of metallic carbon nanotubes and semiconducting carbon nanotubes.

[0024] (2) Depositing 12nm hafnium oxide on the above carbon nanotubes, and then directly exfoliating graphene onto the carbon nanotubes deposited with hafnium oxide by mechanical exfoliation. For metallic carbon nanotubes, use oxygen plasma to etch the graphene on it into graphene nanobelts with a width of 20nm, and for semiconducting carbon nanotubes, use oxygen plasma to etch the graphene on it etched into graphene nanoribbons with a width of 100 nm.

[0025] (3) Remove the hafnium oxide on the electrode connected to the carbon nanotube, and lead out the metal electrode.

[0026] (4) Using the patterning method of electron beam exposure, elect...

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Abstract

The invention discloses a preparation method of a carbon-based nanometer material transistor consisting of carbon nano tubes and graphene. The method provided by the invention comprises the following steps: firstly arranging metallic carbon nano tubes and semiconducting carbon nano tubes on a substrate; utilizing a conducting material to lead out electrodes at two ends of each carbon nano tube; depositing a layer of dielectric material above the carbon nano tubes; then transferring the graphene onto the carbon nano tubes on which the dielectric material is deposited; leading out the electrodes of the carbon nano tubes; and depositing the conducting material at the two ends of the graphene, thus forming the electrodes. According to the invention, the carbon-based nanometer material transistor of two types of structures can be simultaneously manufactured, wherein one carbon-based nanometer material transistor is characterized in that the semiconducting carbon nano tubes are utilized as channels and the graphene is utilized as gate electrodes; and the other carbon-based nanometer material transistor is characterized in that the metallic carbon nano tubes are utilized as the gate electrodes and the graphene is utilized as the channels.

Description

technical field [0001] The invention relates to nano-processing technology, in particular to a method for preparing a carbon-based nano-material transistor composed of carbon nano-tubes and graphene. Background technique [0002] Both carbon nanotubes and graphene are allotropes of carbon, and the atoms are all sp 2 bonded structure, sp 2 bond much stronger than sp in diamond 3 bonds, making carbon nanotubes and graphene the strongest one-dimensional and two-dimensional materials measured so far, respectively. Both graphene and carbon nanotubes have high current transport capabilities (at least two orders of magnitude higher than copper). Additionally, both graphene and carbon nanotubes have large mean free paths at low bias. All these properties make carbon nanotubes and graphene have great application potential in the field of electronic devices. [0003] Large-area graphene is a semi-metal with zero band gap. Using graphene as a field effect transistor can reduce the...

Claims

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Application Information

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IPC IPC(8): H01L21/336B82Y40/00
Inventor 魏芹芹崔晓锐尹金泽曹宇魏子钧赵华波傅云义黄如张兴
Owner PEKING UNIV
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