Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel substrate, epitaxial wafer and semiconductor device

An epitaxial wafer and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the resistance uniformity of the epitaxial layer, low resistivity uniformity, and difficulty in reducing the resistivity uniformity value. Steep, reduce production cost, improve product quality effect

Inactive Publication Date: 2012-01-25
SHANGHAI JINGMENG SILICON CORP
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Currently, the acceptable range for resistivity uniformity of epitaxial wafers is less than 5%
However, the epitaxial wafers in the prior art have the lowest resistivity uniformity of only 2.5%. According to the existing technology, it is difficult to reduce the resistivity uniformity value.
[0009] The interdiffusion of impurities in the substrate and impurities in the epitaxial layer reduces the resistance uniformity of the epitaxial layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel substrate, epitaxial wafer and semiconductor device
  • Novel substrate, epitaxial wafer and semiconductor device
  • Novel substrate, epitaxial wafer and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-4

[0033] Such as figure 2 As shown, the novel substrate includes a substrate body 1 with a single crystal silicon layer 2 on the surface of the substrate body 1 . The thickness of the single crystal silicon layer 2 is 2-5 μm. Its specific thickness can be determined according to the overall thickness of the epitaxial wafer and the thickness of the substrate body. The higher the substrate thickness, the thicker the monocrystalline silicon layer. In subsequent production, an epitaxial layer is grown on the surface of the single crystal silicon layer 2 .

[0034] The substrate body 1 can be N-type, that is, doped with arsenic, phosphorus or antimony; the substrate body 1 can also be P-type, that is, doped with boron.

[0035] Examples 1-4 are all heavy arsenic-doped substrate bodies, and in Examples 1-4, 2 μm, 2.6 μm, 3.5 μm, and 4.8 μm single crystal silicon layers are respectively arranged between the substrate body and the epitaxial layer.

[0036] In Examples 1-4, the mono...

Embodiment 5-8

[0038] image 3 It is a schematic diagram of the epitaxial wafer structure in Embodiment 5-8. Examples 5-8 used the substrates in Examples 1-4, respectively. Such as image 3 As shown, an epitaxial layer 3 is formed on the surface of the single crystal silicon layer 2 . The monocrystalline silicon layer 2 is located between the substrate body 1 and the epitaxial layer 3 .

[0039] In Comparative Examples 1-4, the substrate body is heavily doped with arsenic, and no single crystal silicon layer is provided between the substrate body and the epitaxial layer.

[0040] The comparative data of the epitaxial layer resistance uniformity of Examples 5-8 and Comparative Examples 1-4 are shown in Table 1-4. In each group of comparisons, two substrate bodies produced in the same batch were selected, one was provided with a single crystal silicon layer and then grown an epitaxial layer; the other was directly grown with an epitaxial layer. The epitaxial layer growth process is the sa...

Embodiment 9

[0052]Two heavy phosphorus-doped substrate bodies produced in the same batch were selected, one was used in Example 9, and an epitaxial layer 3 was grown after growing a monocrystalline silicon layer 2 on the surface of the substrate body 1; the other was used in Comparative Example 5, The epitaxial layer is directly grown on the surface of the substrate body. The single crystal silicon layer 2 in Example 9 is formed by reacting trichlorosilane with hydrogen. The reaction temperature was 960° C., and the hydrogen flow rate was 140 slm / s. The single crystal silicon produced by the reaction is deposited on the surface of the substrate body 1 to form a single crystal silicon layer 2 . The single crystal silicon layer 2 has a thickness of 4 μm.

[0053] In Comparative Example 5, no single crystal silicon layer is provided between the substrate body and the epitaxial layer.

[0054] The epitaxial layer growth process in Example 9 and Comparative Example 5 is the same.

[0055] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a novel substrate, which comprises a substrate body, and the novel substrate is characterized in that a monocrystalline silicon layer is arranged on the surface of the substrate body. The resistivity uniformity of an epitaxial layer produced with the novel substrate in the invention can be less than 1.5 percent. Compared with the resistivity uniformity value of an epitaxial layer which is not produced with the novel substrate in the invention, the resistivity uniformity value of the epitaxial layer in the invention can be decreased by one percent. By means of using the novel substrate in the invention, the subsequent production cost can be reduced, and the quality of products can be increased.

Description

technical field [0001] The invention relates to a novel substrate, an epitaxial wafer and a semiconductor device. Background technique [0002] For semiconductor devices, the epitaxial layer needs to have a perfect crystal structure, and there are certain requirements for the thickness, conductivity type, resistivity and resistance uniformity of the epitaxial layer. The resistivity of semiconductors generally changes with changes in temperature, doping concentration, magnetic field strength, and light intensity. [0003] The combination of epitaxial layer and substrate and product specifications are determined by the application of subsequent products. Circuits and electronic components need to be fabricated on epitaxial wafers, and different applications such as PMOS, NMOS, CMOS and bipolar in saturation and non-saturation in MOS. With the development trend of integrated circuit design towards lightness, thinness, shortness, smallness and power saving, products such as mo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/00
Inventor 顾昱钟旻远林志鑫陈斌
Owner SHANGHAI JINGMENG SILICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com