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Back contact heterojunction solar battery based on N-type silicon slice

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of increasing the density of carrier recombination defects, affecting the collection and transmission of photogenerated current, affecting the conversion efficiency of solar cells, etc., to simplify appearance requirements and save production time. , the effect of improving the conversion efficiency

Active Publication Date: 2013-05-01
山东力诺太阳能电力股份有限公司
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Problems solved by technology

[0004] At present, solar cells with HIT structure have the following problems: the first amorphous silicon film has many defects, which increases the carrier recombination defect density in the film body and affects the collection and transmission of photo-generated current; The light-receiving area is reduced, thereby reducing the short-circuit current and affecting the final conversion efficiency of the solar cell

Method used

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  • Back contact heterojunction solar battery based on N-type silicon slice
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  • Back contact heterojunction solar battery based on N-type silicon slice

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Embodiment 1

[0029] Using the plasma enhanced chemical vapor deposition (PECVD) process, a layer of intrinsic amorphous silicon film 3 is deposited on the upper and lower surfaces of the crystalline silicon after diffusion at 250°C, with a thickness of about 5nm, which has a passivation effect; deposited on the upper surface of the crystalline silicon A high-concentration N+ a-Si amorphous silicon thin film 2 with a thickness of 5-10nm; a thin layer of P-a-Si amorphous silicon 6 with a thickness of 5-10nm is deposited on the back surface; Silicon nitride light-receiving surface anti-reflection film 1 is grown on the front surface, with a thickness of 85nm and a refractive index of 2.05; its function reduces the reflection loss on the surface of the battery, and the light reflection loss of the solar battery after coating can be reduced to less than 4%; Effective surface passivation and bulk passivation, reducing recombination centers, improving minority carrier lifetime, and increasing photoc...

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Abstract

The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on an N-type silicon chip. From the back features, it is divided into N-type region and P-type region. N-type region forms N+a-si / i-a-si / N-c-si / N+c-si heterojunction structure, and P-type region forms N+a-si / i-a-si / N-c-si / N+c-si / i-a-si / P-a-si heterojunction structure. The solar cell of the present invention does not appear the light-induced attenuation phenomenon of conventional P-type crystalline silicon solar cells, has better spectral response, and the thickness of the battery is greatly thinner than that of conventional crystalline silicon solar cells; The problem of shading the front electrode of the solar cell greatly improves the conversion efficiency of the solar cell; the low-temperature sintering process greatly simplifies the production process and reduces the production cost, which is suitable for industrial production.

Description

technical field [0001] The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on an N-type silicon chip. Background technique [0002] In the 21st century, energy crisis and environmental pollution have become global problems that need to be solved urgently. The development of green energy has become the main method to solve the crisis. Among them, solar cells have become the goal of competing development of countries all over the world because of their cleanliness, safety and renewability. At present, the main development direction of solar cells is to reduce costs and increase efficiency. [0003] The heterojunction solar cell composed of new amorphous silicon and crystalline silicon has a simple structure and simple process. It combines the advantages of high carrier mobility of crystalline silicon with the advantages of low-temperature chemical vapor deposition of amorphous silicon technology, and has become the leading s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0747H01L31/0352H01L31/0224
CPCH01L31/0747H01L31/022441Y02E10/50
Inventor 张黎明李玉花刘鹏姜言森杨青天高岩徐振华张春艳王兆光程亮任现坤
Owner 山东力诺太阳能电力股份有限公司
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