N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery

Abstract

The invention relates to the field of an N-type solar battery, particularly the N-type solar battery prepared by a film masking process of one multi-purpose film and a preparation method of the N-type solar battery. The N-type solar battery has the structure that: an n-type straight-pull monocrystalline silicon is used as a substrate, the backside of a silicon sheet is a P-type emitter junction prepared by boron diffusion of a SiO2 and SiNx coated dual-layer passivation film, and the front side of the silicon sheet is a front surface field prepared by phosphorous diffusion and a thin film playing a passivation and reflection reduction role covers on the front surface field. The preparation method of the N-type solar battery comprises the following steps of: with the n-type straight-pull monocrystalline silicon as the substrate, preparing the P-type emitter junction by the boron diffusion firstly, and then etching the P-type emitter junction on the front side; preparing the SiO2 film on the P-type emitter junction on the backside of the silicon sheet, wherein the SiO2 film is not only a mask film for preparing the front surface field by the phosphorous diffusion subsequently, but also the passivation film of the P-type emitter junction; and lastly, preparing the front surface field by the phosphorous diffusion. The invention has the advantages of simple technique process, easy control, low cost and high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of N-type solar cells, in particular to an N-type solar cell prepared by a one-film multi-purpose mask method and a preparation method thereof. Background technique [0002] At present, the crystalline silicon solar cells produced by major domestic solar companies are all P-type silicon substrates. However, because the n-type silicon substrates are more resistant to impurities and have no problem of light-induced attenuation, higher efficiency can theoretically be achieved. , In fact, Germany, the United States, Japan and other developed countries attach great importance to renewable energy, especially solar energy resources, and have made great breakthroughs in the research and production of n-type solar cells. Such as Germany's Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) announced that the agency developed a solar cell based on n-type monocrystalline silicon, and its conversion efficiency reached ...

AI Technical Summary

Problems solved by technology

The n-type back-contact solar cell of Sunpower Corporation of the United States has a maximum efficiency of 24.3%, and it has been mass-produced for many years. In addition, the HIT cell of Japan Sanyo Corporation has a conversion efficiency of 23%, and has been mass-produced. However, the above n The process of small solar cells is complicated and the cost is high

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