Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dysprosium ion activated gadolinium gallium garnet novel laser crystal

A technology of gadolinium gallium garnet and laser crystal, applied in the field of laser crystal materials, can solve the problems of unseen laser performance, low thermo-optic effect, and less research on laser crystals, etc.

Inactive Publication Date: 2011-07-27
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 2. Low thermo-optic effect:
[0024] Obviously, GGG is an excellent laser host crystal, but the focus of current research is mainly on Nd-activated high-power heat-capacity laser crystals. For other active ion-doped Gd 3 Ga 5 o 12 Laser crystals are less studied, especially for Dy 3+ Doped Gd 3 Ga 5 o 12 At present, there are no research reports on the growth and spectral properties of laser crystals at home and abroad, let alone research reports on laser properties.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dysprosium ion activated gadolinium gallium garnet novel laser crystal
  • Dysprosium ion activated gadolinium gallium garnet novel laser crystal
  • Dysprosium ion activated gadolinium gallium garnet novel laser crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment one: Dy:Gd 3 Ga 5 o 12 Crystal Growth Preparation

[0033] The instrument used for crystal pulling method growth is DJL-400 intermediate frequency pulling furnace, and the model of intermediate frequency power supply is KGPF25-0.3-2.5. Use Pt / Pt-Rh thermocouple and type 815EPC ohmmeter for temperature control. The crucible used is an iridium crucible of Φ55mm×30mm, and the raw material used is 4N grade Gd 2 o 3 , Ga 2 o 3 、Dy 2 o 3 . Prepare raw materials according to the following chemical reaction formula:

[0034] (3-x)Gd 2 o 3 + Ga 2 o 3 +xDy 2 o 3 →2Gd (3-x) Dy x Ga 5 o 12

[0035] x=0.1at%~5at%; mix the raw materials evenly, press them into flakes, put them into a platinum crucible, put them into a common sintering furnace, slowly raise the temperature to 1080°C at 150°C / h, keep it for 48h, repeat this process, and then Put it into a high-temperature sintering furnace and sinter at a constant temperature of 1350 ° C for 72 hours, a...

Embodiment 2

[0037] Embodiment two: Dy:Gd 3 Ga 5 o 12 Crystal Laser Experiments

[0038] Process high-quality Dy:Gd with a size of φ5mm×(10mm~20mm) 3 Ga 5 o 12 Crystal devices, laser experiments with suitable pump sources including xenon lamps. The experimental device is attached figure 1 shown. 1 in the figure is rod Dy:Gd 3 Ga 5 o 12 Crystal; 2 is a suitable pump source including xenon lamp; 3 is a dielectric mirror that totally reflects a specific wavelength in the λ=550-600nm band; 4 is a specific wavelength part in the λ=550-600nm band Transmission dielectric mirror; 5 is LPE-1A laser energy meter.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a dysprosium ion activated gadolinium gallium garnet novel laser crystal, and relates to the field of laser crystal materials. The crystal material has the chemical formula of Dy:Gd3Ga5O12. Gd2O3, Ga2O3 and Dy2O3 of 4N are adopted as raw materials, a Dy:Gd3Ga5O12 raw material is obtained through high temperature solid-phase reaction, and crystals are grown through a Czochralski method. The material is used for realizing yellow laser output.

Description

technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] In the research of lasers in the visible band, red, green, and blue primary color laser outputs have been obtained through frequency doubling and frequency mixing of related crystal laser wavelengths, but research on coherent radiation in the 550nm to 600nm yellow band is rare, so far There is no mature solid-state coherent light source in this band. As people pay more attention to the wide application of yellow solid coherent light sources in biomedicine, food and drug detection, medical cosmetology, information storage, communications, military industry, atmospheric remote sensing, etc., the development of high-power or low-power, high-efficiency, stable and The long-lived yellow solid coherent light source is imminent. [0003] Utilizing existing light-emitting crystals and various novel laser technologies is the main way to develop yellow lasers. There a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/28C30B15/00H01S3/16
Inventor 王燕涂朝阳游振宇李坚富朱昭捷
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com