Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A pellicle for lithography

一种防尘薄膜组件、防尘薄膜的技术，应用在用于光机械处理的原件、光学、电气元件等方向，能够解决剥离困难、粘接剂老化加快等问题，达到容易更换、耐光性高、抑制老化的效果

Inactive Publication Date: 2011-06-01
SHIN ETSU CHEM CO LTD
View PDF11 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is another problem here, that is, when the adhesive contained in the adhesive layer is irradiated with an argon fluoride (ArF) excimer laser (wavelength: 193 nm) or placed in an environment surrounded by ozone, the aging of the adhesive faster, it becomes difficult to peel the photomask from the pellicle frame

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A pellicle for lithography
  • A pellicle for lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] After cleaning the aluminum alloy pellicle frame (outer dimensions 149 mm x 113 mm x 4.5 mm, thickness 2 mm) with pure water, the Shin-Etsu Chemical Co., Ltd. A curable composition of a fluorine compound (trade name: X-71-8023) to form an adhesive layer. Next, heat is applied to the frame of the dust-proof film assembly by electromagnetic induction heating method, so that the curable composition is cured. The penetration of the adhesive layer after curing according to ASTM D-1403 was 100, and its thickness was 0.3 mm.

[0045] Apply Cytop (CYTOP) adhesive (trade name: CTX-A) manufactured by Asahi Glass Co., Ltd. on the other surface of the pellicle frame (the surface opposite to the surface on which the adhesive layer has been formed), Thus forming an adhesive layer. Heat was applied to the pellicle frame at a temperature of 130°C to cure the adhesive layer.

[0046] Then, attach the adhesive layer coated on the other side surface of the pellicle frame to the pellicl...

Embodiment 2

[0050] After washing the dust-proof film module frame made of aluminum alloy (outer dimension: 149mm × 113mm × 4.5mm, thickness: 2mm) with pure water, the surface of one side is coated with linear perfluorinated A curable composition of the compound (trade name: SIFEL8070 (Sifel 8070)) was used to form an adhesive layer. Then, the surface of the adhesive layer was contacted with a PET film. Next, the frame of the dust-proof film module is heated by electromagnetic induction heating, and after the curable composition in the adhesive layer is cured, the PET film is peeled off. After curing, the penetration of the adhesive layer defined by ASTM D-1403 was 70, and its thickness was 0.3 mm.

[0051] On the other surface of the pellicle frame (the surface opposite to the surface on which the adhesive layer has been formed), Cytop (CYTOP) adhesive (trade name: CTX-A) manufactured by Asahi Glass Co., Ltd. is applied, thereby Form an adhesive layer. Heat was applied to the pellicle ...

Embodiment 3

[0056] After cleaning the dust-proof film module frame made of aluminum alloy (outer dimension: 149mm × 113mm × 4.5mm, thickness: 2mm) with pure water, the surface of one side is coated with linear perfluorinated film made by Shin-Etsu Chemical Co., Ltd. Compound curable composition (trade name: X-71-8122) to form an adhesive layer. Then, the surface of the adhesive layer was contacted with a PET film. Next, the frame of the dust-proof film module is heated by electromagnetic induction heating method, and after the curable composition in the adhesive layer is cured, the PET film is peeled off. After curing, the penetration of the adhesive layer defined by ASTM D-1403 was 70, and its thickness was 0.3 mm.

[0057] Apply Cytop (CYTOP) adhesive (trade name: CTX-A) manufactured by Asahi Glass Co., Ltd. on the other surface of the pellicle frame (the surface opposite to the surface on which the adhesive layer has been formed), An adhesive layer was thus formed, and the pellicle f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
surface smoothnessaaaaaaaaaa
Login to View More

Abstract

A pellicle 10 for lithography includes a pellicle frame 3, a pellicle membrane 1 adhered onto the upper end surface of the pellicle frame 3 and an agglutinant layer 4 formed on the lower surface of the pellicle frame 3 and the agglutinant layer 4 is formed by hardening a curable composition containing a straight chain perfluoro compound having a perfluoro structure in a main chain. The thus constituted pellicle 10 generates only a small amount of a decomposition gas even when it is used for a long time, thereby preventing solid-like foreign materials from separating out on a pattern region of a photomask 5 and can suppress degradation of an the agglutinant agent contained in an agglutinant layer 4 to be used for fixing a photomask 5 to the pellicle frame 3. Further, this pellicle 10 can be easily peeled off from a photomask 5 and replaced with a new one.

Description

technical field [0001] The present invention relates to a pellicle for photolithography used as a dust cover for a photomask or a reticle in the manufacturing process of semiconductor devices such as LSI and VLSI or liquid crystal display panels. Background technique [0002] When manufacturing semiconductor devices such as large-scale integrated circuits and ultra-large-scale integrated circuits, or liquid crystal displays, exposure light is irradiated to Semiconductor wafers or liquid crystals are used on the original plate, so that the pattern of the photomask is transferred to form the pattern of the semiconductor device or liquid crystal display. [0003] There is such a problem here that when dust or other foreign matter is attached to the photomask, since the exposure light will be reflected or absorbed by the foreign matter such as dust attached to the surface of the photomask, not only will the light transferred to the semiconductor wafer Or the pattern on the orig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/62H01L21/027
CPCG03F1/142G03F1/62G03F1/64G03F1/84
Inventor 白崎享福田健一
Owner SHIN ETSU CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com