Manufacturing method of SiGe heterojunction bipolar transistor

Abstract

The invention discloses a manufacturing method of a SiGe heterojunction bipolar transistor. The method comprises the following steps of: forming high P-type doped polycrystalline silicon which raises an outer base region in combination with materials and a process used in a shallow slot isolation process module; forming an inner base region of a germanium-silicon heterojunction bipolar transistor region by using a selective epitaxial process; and depositing an emitter by taking a medium film as an isolation layer between the emitter and the outer base region so as to form a raised outer base region, wherein a self-aligned germanium-silicon heterojunction bipolar transistor is arranged between the outer base region and the emitter. Process steps are reduced, manufacturing time is shortened and manufacturing cost is lowered.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, in particular to a method for manufacturing a SiGe (silicon germanium) heterojunction bipolar transistor. Background technique [0002] Since SiGe HBT (SiGe Heterojunction Bipolar Transistor) has high-speed and low-noise requirements, it has more and more applications in the radio frequency field. While people in the industry are constantly working hard to improve its operating frequency (increase the speed of use), it has good competitiveness in cost, that is, it strives to make its performance reach GaAs (gallium arsenide) devices with lower cost (using CMOS process And have good compatibility with CMOS). In order to increase the speed, it has become a consensus to raise the position of the outer base area to reduce the capacitance of the base-collector area, and to use the self-alignment of the outer base area and the emitter to obtain a low base area resistance. ...

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Problems solved by technology

[0003] Existing device structures such as figure 1 As shown (US patent application US6,927,476): After the STI (Shallow Trench Isolation) process is completed, a series of processes are used to obtain a self-aligned device structure, and the process is complicated (after the STI process is completed and before the emitter is deposited, A total of more than 8 times of film growth process, secondary photolithography, secondary CMP (chemical mechanical polishing), 6 times of film etching); another structure such as figure 2 As shown (US patent application US7,037,798), the construction of the SiGe HBT is also started after the completion of the STI process. From the completion of the STI process to the deposition of the emitter, a total of more than 7 film growth processes have been added. engraving, 6 times of film etching), there is also the problem of complex process

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