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Method for connecting AlN (aluminum nitride) ceramics and SiC/Al composite material respectively plated with thin-film metal layer on surface

A thin-film metal layer and composite material technology, applied in the direction of welding/cutting media/materials, metal processing equipment, welding media, etc., can solve the problems of high melting point and unsuitable connection of AlN and Al-based composite materials

Inactive Publication Date: 2011-04-13
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But generally this kind of solder has a higher melting point, and the brazing temperature is usually above the melting point of Al, so it is not suitable for connecting AlN and Al-based composite materials.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1: The Al-Ag-Cu solder flakes were polished smooth to 0.1mm, cleaned with acetone solution and soaked in fluoride flux for 5 seconds, then placed between the welding surfaces of AlN and SiCp / Al, and Add a small piece of briquette to make full contact between the solder and the base metal, and put the above prepared materials into the brazing furnace; Pour argon into the brazing furnace, and heat it up to 570 °C at a rate of 10 °C / min. And keep it for 10min, and finally cool to room temperature with the furnace, the connection between aluminum nitride and silicon aluminum carbide base can be realized, the shear strength of the brazed joint reaches more than 100MPa, and the air tightness is 1.0×10 -11 Pa·m 3 / s, all meet the national standard.

Embodiment 2

[0015] Example 2: The Al-Ag-Cu solder was polished smooth to 0.2mm, cleaned and soaked in fluoride flux for 5 seconds, then placed between the welding surfaces of AlN and SiCp / Al, and a small piece was added Press the block to make the base metal fully contact with the solder, put the above prepared materials into the brazing furnace; pass argon gas into the brazing furnace, raise the temperature to 580 °C at a rate of 10 °C / min, and keep the temperature for 5 minutes, and finally follow the The furnace is cooled to room temperature, and the shear strength of the brazed joint is above 100MPa, and the air tightness is 1.0×10 -11 Pa·m 3 / s, all meet the national standard.

Embodiment 3

[0016] Example 3: The Al-Ag-Cu solder was polished smooth to 0.3mm, cleaned and soaked in fluoride flux for 5 seconds, then placed between the welding surfaces of AlN and SiCp / Al, and a small piece was added Press the block to make the base metal fully contact with the solder, and put the above prepared materials into the brazing furnace; pass the brazing furnace into argon, and heat it up to 590 °C at a rate of 10 °C / min; keep the temperature for 3 minutes; After cooling to room temperature, the connection can be realized. The shear strength of the brazed joint reaches more than 100MPa, and the air tightness is 1.0×10 -11 Pa·m 3 / s, all meet the national standard.

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Abstract

The invention provides a method for connecting AlN (aluminum nitride) ceramics and a SiC / Al composite material respectively plated with a thin-film metal layer on the surface, which belongs to the field of electrical packaging materials and technology. The method is characterized in that the surfaces of the adopted AlN ceramics and SiC / Al composite material are respectively plated with a thin-film metal layer, and the metal layer is made of nickel with a thickness of 1 to 10 mu m; and the adopted solder is a 40Al-40.7Ag-19.3Cu eutectic solder which is required to be used with fluoride soldering flux; the method comprises the following steps: firstly, cleaning the AlN ceramics, the SiC / Al composite material and the solder by using a physical or chemical method; putting the solder between the welding surfaces of the AlN ceramic and the SiC / Al composite material, then adding appropriate fluoride soldering flux; and finally, carrying out heat preservation on the obtained product for 3 to 30 minutes in a protective atmosphere at the temperature of 560 to 600 DEG C. The method provided by the invention has the advantages: at the brazing temperature, the basic properties of base metals are not affected; the solder does not intrude into the base metals so as to affect the properties of the base metals and welded joints; and the welded joints are good in property, the shearing strength of the welded joint reach 110MPa, and the air tightness of the welded joint is 1.0*10-11 Pa m<3> / s.

Description

technical field [0001] The invention relates to the field of electronic packaging materials and packaging technology, and provides a method for connecting aluminum nitride ceramics (AlN) and silicon carbide aluminum matrix composite materials (SiC / Al). Background technique [0002] AlN ceramics have the characteristics of high thermal conductivity, low dielectric constant and dielectric loss, excellent mechanical properties and electrical insulation, non-toxicity and thermal expansion coefficient matching Si, and are considered as the new generation of high-power electronic device ceramic base. It is the preferred material for chips and packaging, and has a very broad application prospect in the field of microelectronics. SiC / Al composite material has high thermal conductivity, low density, and thermal expansion coefficient can be adjusted by controlling the volume fraction of silicon carbide. It is considered to be an ideal material to replace traditional packaging material...

Claims

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Application Information

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IPC IPC(8): B23K1/008B23K1/20B23K35/30
Inventor 曲选辉秦明礼钟小婧王英贤张怀龙吴茂
Owner UNIV OF SCI & TECH BEIJING
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