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Double-layer anti-reflective film for crystalline silicon solar battery and preparation method thereof

A technology of solar cells and anti-reflection coatings, which is applied to circuits, electrical components, semiconductor devices, etc., can solve problems such as low reflectivity and difficulty in achieving anti-reflection effects with a single-layer anti-reflection coating, and achieve simple equipment and improved photoelectric conversion Efficiency, the effect of simple preparation method

Inactive Publication Date: 2011-02-09
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under normal circumstances, it is difficult to achieve the ideal anti-reflection effect with a single-layer anti-reflection coating. Multi-layer anti-reflection coating
[0005] In the prior art, large-scale production uses the PECVD method to prepare SiN x film, but its reflectivity is not very low

Method used

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  • Double-layer anti-reflective film for crystalline silicon solar battery and preparation method thereof
  • Double-layer anti-reflective film for crystalline silicon solar battery and preparation method thereof
  • Double-layer anti-reflective film for crystalline silicon solar battery and preparation method thereof

Examples

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Embodiment 1

[0034] A method for preparing a double-layer anti-reflection film for a crystalline silicon solar cell, comprising the following steps: according to the conventional treatment method of the battery, the silicon wafer is cleaned and textured, diffused to prepare a PN junction, and the silicon wafer is etched and removed. PN junction, cleaning to remove phospho-silicate glass, and then include the following steps:

[0035] The first step: grow a layer of SiO on the surface of the silicon wafer by thermal oxidation method 2 thin film, reactive gas N 2 10L / min, O 2 The process temperature is 15L / min, the process temperature is 880°C, and the time is 20min to form a layer of SiO with a refractive index of 1.46 and a thickness of 10nm. 2 film;

[0036] Step 2: Take a certain amount of n-butyl titanate and slowly add it dropwise into n-butanol, the solution concentration is 0.5mol / L, stir the solution for 0.5h with a magnetic stirrer, then add 1~3mL distilled water dropwise , sti...

Embodiment 2

[0045]A method for preparing a double-layer anti-reflection film for a crystalline silicon solar cell, comprising the following steps: according to the conventional treatment method of the battery, the silicon wafer is cleaned and textured, diffused to prepare a PN junction, and the silicon wafer is etched and removed. PN junction, cleaning to remove phospho-silicate glass, and then include the following steps:

[0046] The first step: grow a layer of SiO on the surface of the silicon wafer by thermal oxidation method 2 thin film, reactive gas N 2 20L / min, O 2 The process temperature is 30L / min, the process temperature is 880°C, and the time is 40min to form a layer of SiO with a refractive index of 1.46 and a thickness of 20nm. 2 film;

[0047] Step 2: Take a certain amount of isopropyl titanate and slowly add it dropwise into isopropanol. The concentration of the solution is 0.4mol / L. After stirring the solution for 0.5h with a magnetic stirrer, add 1~3mL of distilled wat...

Embodiment 3

[0054] A method for preparing a double-layer anti-reflection film for a crystalline silicon solar cell, comprising the following steps: according to the conventional treatment method of the battery, the silicon wafer is cleaned and textured, diffused to prepare a PN junction, and the silicon wafer is etched and removed. PN junction, cleaning to remove phospho-silicate glass, and then include the following steps:

[0055] The first step: grow a layer of SiO on the surface of the silicon wafer by thermal oxidation method 2 thin film, reactive gas N 2 30L / min, O 2 The process temperature is 30L / min, the process temperature is 840°C, and the time is 60min to form a layer of SiO with a refractive index of 1.46 and a thickness of 20nm. 2 film;

[0056] Step 2: Take a certain amount of titanium tetrachloride and slowly add it dropwise into absolute ethanol, the solution concentration is 0.3mol / L, stir the solution for 0.5h with a magnetic stirrer, then add 1-3mL distilled water dr...

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Abstract

The invention discloses a double-layer anti-reflective film for a crystalline silicon solar battery, which is formed by two layers of films, wherein the first layer of film is arranged on the surface of a silicon wafer substrate of the crystalline silicon solar battery, and the second layer of film is arranged on the surface of the first layer of film; the first layer of film is a silicon dioxide film, the thickness of the silicon dioxide film is 10-20nm, and the refractive index of the silicon dioxide film is 1.45-1.47; and the second layer of film is a titanium dioxide film, the thickness of the titanium dioxide film is 50-60nm, and the refractive index of the titanium dioxide film is 2.15-2.45. The anti-reflective film of the invention can obviously reduce the reflection of the surface of the battery to light, and can improve the photoelectric conversion efficiency of the crystalline silicon solar battery.

Description

technical field [0001] The invention relates to an anti-reflection film and a preparation method thereof, in particular to an anti-reflection film applied to the surface of a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation, and the development of solar cells is one of the ways to solve the above problems. Therefore, all countries in the world are actively developing solar cells, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. [0003] At present, the manufacture of crystalline silicon solar cells includes the following steps: (1) cleaning and texturing of silicon wafers; (2) diffusion to prepare PN junctions; (3) etching to remove PN junctions around silicon waf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 张凤王栩生章灵军
Owner CSI CELLS CO LTD
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