Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof

Abstract

The invention relates to a cubic silicon carbide (3C-SiC) monocrystal film with reversed extension growth on a Si base and a preparation method thereof, belonging to the preparation field of novel Si-base wide band-gap semiconductors, wherein the cubic silicon carbide (3C-SiC) monocrystal film with reversed extension growth on the Si base is formed by diffusing carbon on the Si base to Si and reacting with the Si. The method adopts low-temperature chemical vapor deposition (LPCVD for short), comprising the following steps of: diffusing the carbon to the Si by utilizing methane decomposition at high temperature to effectively displace the Si, and forming the 3C-SiC monocrystal film with the stoichiometric ratio of 1:1 by using a reversed extension growth mechanism, wherein the thickness of the 3C-SiC monocrystal film can reach the micrometer level, the electronic Hall mobility at the room temperature reaches 1.22*10<3> cm<2> / (V.S), and the electronic Hall mobility in liquid nitrogen reaches 2.06*10<3> cm<2> / (V.S). The impurity concentration and the condition type of the 3C-SiC monocrystal film prepared in the method can be controlled through the impurity concentration and the condition type of a monocrystal silicon substrate, and the impurity concentration in the film is uniform. The preparation method can be used for obtaining the Si-base reversed extension 3C-SiC monocrystal film with low stress and high quality.

Description

technical field [0001] The invention relates to a "reverse epitaxial" 3C-SiC single crystal thin film on a Si base by LPCVD method and a preparation method thereof, which belongs to the production technology of a new Si base semiconductor material. Background technique [0002] Since 1824, the Swedes Since Jacob Berzelius accidentally discovered SiC, a new compound, in the process of trying to prepare diamond, SiC has attracted great interest as a semiconductor material. In 1955, Lely used the sublimation method to prepare SiC single crystal, which opened the prelude to the development of SiC semiconductor materials. S. Nishino used chemical vapor deposition (CVD) technology to prepare a 3C-SiC single crystal film on a cheap Si substrate, and many people worked hard to set off a SiC research boom. At present, the methods for preparing 3C-SiC single crystal thin films mainly include liquid phase epitaxy, ion implantation, molecular beam epitaxy, chemical vapor deposition (...

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Problems solved by technology

However, the direct epitaxial 3C-SiC single crystal film on the silicon substrate mainly has the following problems: (1) has a large lattice mismatch coefficient (up to 20%), (2) has a large thermal expansion coefficient mismatch (8% )

The above method requires precise control of the percentages of carbon and silicon atoms in the mixed gas, thus, to some extent, restricts the growth of precisely atomically matched 3C-SiC single crystal thin films

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