Improved hot melt compositions
A composition and substrate technology, applied in the direction of photoengraving process, instruments, circuit covers, etc. on the pattern surface, can solve problems such as defective electronic devices, damaged adhesion or metal plating, etc., and achieve good image clarity, good Effects of low flow mobility
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Embodiment 1-7
[0062] Inkjet Resist Composition
[0063] Table 1
[0064] formula
1
2
3
4
5
6
7
40wt%
40wt%
Tripropylene glycol diacrylate
45wt%
35wt%
80wt%
Trimethylolpropane Ethoxylation
Triacrylate
50wt%
45wt%
80wt%
60wt%
50wt%
2-Hydroxypropyl Acrylate
30wt%
20wt%
free radical initiator
2wt%
10wt%
2.5wt%
5wt%
Hydroxycyclohexyl phenyl ketone
3wt%
2.5wt%
10wt%
2.5wt%
5wt%
2-tert-butylanthraquinone
5wt%
2.5wt%
5wt%
acid wax
montan ...
Embodiment 8
[0068] Application of Resist in Printed Circuit Board
[0069] The resist compositions in Examples 1-7 were selectively sprayed from piezoelectric drop-on-demand (Spectra TM Se-128) onto seven FR4 epoxy boards with copper clad thickness ranging from 15 μm to 30 μm. Inkjet temperature from 65°C to 95°C. After the resist composition was selectively applied to the respective panels, the composition was exposed to 150 mJ / cm of a Fusion D bulb operating at 120 W / cm 2 to 200mJ / cm 2 in ultraviolet light. All resists are expected to cure.
[0070] The hardness of all resists was measured using the pencil hardness test of ASTM D3363-05. Hardness values are expected to be 3H or higher. The hardest value available is 5H and the softest is 1H.
[0071] Each board was then immersed in an aqueous etching solution of 4N copper chloride and etched at 50° C. for 5 minutes to etch away the copper portion not covered with the etchant resist. Copper was etched to a depth of 38 μm. The ...
Embodiment 9
[0074] Application of Resist in Semiconductor
[0075] Seven doped monocrystalline silicon semiconductor wafers with pn junctions were provided. The front or emitter layer of a doped monocrystalline silicon wafer is textured and n++ doped. The backside is doped with aluminum p++. The region between the n++ doped emitter layer and the p++ doped backside is n+ doped. The front side of the doped monocrystalline silicon wafer is covered with a 500nm thick layer of silicon nitride. The silicon nitride is insulating and acts as an antireflection layer.
[0076] Each anti-reflection layer of the silicon wafer was selectively covered with one of the seven resist compositions in Examples 1-7, and a circuit was formed by a drop-on-demand inkjet printer at 80°C to 100°C. The resist composition was deposited with a distance of 3 mm between each circuit. A resist is deposited on the insulating layer to a thickness of 10 μm. The resist is then exposed to 150mJ / cm of fusion UV tape sys...
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