Process for preparing selective emitter solar crystalline silicon solar cell
A solar cell and preparation process technology, applied in the field of solar cells, can solve problems such as high cost, relatively high equipment requirements, complex process, etc., and achieve the effects of good repeatability, high process controllability, and convenience for mass production
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Embodiment 1
[0040] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:
[0041] (a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;
[0042] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high ...
Embodiment 2
[0052] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:
[0053](a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;
[0054] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high a...
Embodiment 3
[0064] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:
[0065] (a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;
[0066] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high ...
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