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Production method of langasite crystal element

The technology of crystal element and lanthanum silicate is applied in the field of production of lanthanum silicate crystal element, and can solve the problems of undisclosed lanthanum silicate crystal for making crystal element, low resistance coupling coefficient, small filter, and the like. Achieve the effects of reasonable process step design, low electrical coupling coefficient, and strong process operability

Active Publication Date: 2012-03-21
JIANGSU HAIFENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Artificial crystal piezoelectric crystal components have the characteristics of low resistance coupling coefficient, poor temperature stability, and small frequency recognition, which cannot meet the needs of the growing filters and high-temperature sensors.
Moreover, there is no method disclosed in the prior art for making crystal elements from gallium lanthanum silicate crystals

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1. A production method of gallium lanthanum silicate crystal element, the steps are as follows:

[0025] (1) Get the raw material gallium lanthanum silicate crystal and cut it into strip crystal material with multi-knife cutting machine; then use X-ray orientation instrument to measure the crystal orientation angle of the strip crystal material, and the orientation accuracy is ±10′;

[0026] (2) slice the strip crystal material with a multi-knife cutting machine according to the requirements of directional angle measurement, and then use a circle-changing machine to change the circle to obtain a disc-shaped crystal material;

[0027] (3) Carry out three-stage grinding treatment of rough grinding, medium grinding and fine grinding to the wafer-shaped crystal material with a grinder in turn, and carry out automatic frequency monitoring to the wafer-shaped crystal material during grinding, so as to reach the respective grinding thickness requirements; rough grindin...

Embodiment 2

[0030] Example 2. The production method of gallium lanthanum silicate crystal element described in embodiment 1, in step (1) or (2), the cutting fluid required for the cutting process of multi-knife cutting machine is made up of SiC abrasive material, kerosene and PC oil, and its The weight ratio is: SiC abrasive: kerosene: PC oil=3:7:7.

Embodiment 3

[0031] Example 3. The production method of gallium lanthanum silicate crystal element described in embodiment 1, in step (1) or (2), the cutting fluid required for the cutting process of multi-knife cutting machine is made up of SiC abrasive material, kerosene and PC oil, and its The weight ratio is: SiC abrasive: kerosene: PC oil=5:5:5.

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Abstract

The invention relates to a production method of a langasite crystal element, which is characterized by taking a raw material langasite crystal, and cutting into strip-shaped crystal materials; then carrying out crystal orientation angle measurement; using a multi-knife cutting machine for cutting the strip-shaped crystal materials into pieces according to the orientation angle measurement requirements, carrying out rounding treatment and obtaining chip-like crystal materials; sequentially carrying out coarse grinding, medium grinding and fine grinding treatment on the chip-like crystal materials for achieving the respective grinding thickness requirements; carrying out double-sided silver coating treatment on the chip-like crystal materials after grinding, using a vacuum micro-adjustment machine for carrying out frequency adjustment on the chip-like crystal materials after silver coating, and obtaining frequency chips required by manufacturing the crystal element; and placing the frequency chips on a crystal element base, dispensing, fixing, packaging and obtaining the langasite crystal element. The production method has reasonable design of process steps and strong process maneuverability; and the prepared langasite crystal element has large low electrical coupling coefficient, good temperature stability and relatively steep band edge, and can be applied in filters, high-temperature sensors and other aspects.

Description

technical field [0001] The invention relates to a production method of crystal components, in particular to a production method of gallium lanthanum silicate crystal components. Background technique [0002] Since it was first reported in the 1980s, lanthanum gallium silicate (La 3 Ga 5 SiO 14 , referred to as LGS) crystal research has been concerned by people. Initially, LGS was studied as a laser crystal. Since the report of LGS single crystal vibration with zero temperature coefficient, the piezoelectric properties of LGS and bulk acoustic wave (BAW, bulkacoustic wave), surface acoustic wave (SAW, surface acoustic wave) Performance research has become a hot spot. LGS has an electromechanical coupling coefficient 2 to 3 times larger than that of quartz, and has temperature stability comparable to that of quartz. BAW and SAW have low propagation speeds, and there is no phase change from room temperature to melting point (1470°C). Many properties make LGS the object of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/00H01L41/22B24B37/00H10N30/01H10N30/086
Inventor 朱木典郑燕青朱柳典张茁
Owner JIANGSU HAIFENG ELECTRONICS
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