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Method for preparing gallium-doped p-type crystalline silicon

A crystalline silicon, p-type technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of reducing the comprehensive electrical properties of silicon wafers, achieve cost feasibility, reduce deviation range, and increase Ga content Effect

Inactive Publication Date: 2010-08-25
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this compensation material meets the requirements of battery preparation in terms of resistivity, it reduces the comprehensive electrical properties of the silicon wafer

Method used

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  • Method for preparing gallium-doped p-type crystalline silicon
  • Method for preparing gallium-doped p-type crystalline silicon
  • Method for preparing gallium-doped p-type crystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Ga-doped p-type polysilicon ingots are prepared by directional solidification under the action of a DC electric field, see Figure 3, and the following steps are adopted:

[0029] 1) Calculate the Ga doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0030] 2) Set cathode 13 at the bottom of crucible 1, put silicon material and dopant into crucible 1 according to a certain ratio, then set anode 14 above the silicon material, connect cathode 13 to the negative pole of DC power supply 11 with wire 12, anode 14 Connect to the positive pole. When arranging the electrodes, pay attention to make the direction of the electric field parallel to the growth direction of the crystal. The anode 14 and the cathode 13 are made of high-purity graphite, and the wire 12 is made of high-purity molybdenum wire.

[0031] 3) Place the filled crucible 1 in the furnace cavity...

Embodiment 2

[0036] Ga-doped p-type single crystal silicon rods are drawn by the CZ method under the action of a DC electric field, see Figure 4, and the following steps are used to achieve:

[0037] 1) Calculate the doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0038] 2) The crucible 1 made of high-purity graphite is used as the anode, and is connected to the positive electrode of the power supply 11 with a wire 12; silicon material and dopant are put into the crucible 1 according to a certain ratio, heated to melt the silicon material, and the temperature control system is adjusted to start Pulling, after completing the necking and shoulder growth and entering the equal-diameter growth stage, the growth crystal 3 is connected to the negative electrode of the power supply 11 as the cathode,

[0039] 3) Start to apply a DC electric field to the silicon liquid 2, the vol...

Embodiment 3

[0044] The FZ method is used to grow Ga-doped p-type single crystal silicon rods under the action of a DC electric field, see Figure 5, and the following steps are used to achieve:

[0045] 1) Calculate the doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant. The dopant can be added in advance to the silicon rod 5 to be melted or added during the zone melting process.

[0046] 2) Assuming that the induction coil 20 moves from bottom to top, the growing crystal 3 is used as the cathode, and the crystal to be melted 5 is used as the anode, and are respectively connected to the negative pole and the positive pole of the power supply 11 by wires 12 .

[0047] 3) Increase the power of the induction coil 20 to melt the part of the silicon rod 5 to be melted, and start to apply an electric field to the silicon liquid 2. The voltage between the electrodes is 0.1-10V or the...

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Abstract

The invention discloses a method for preparing Ga-doped p-type crystalline silicon. The method is characterized in that a DC electric field parallel to a crystal growth direction is applied to molten silicon liquid during the crystal growth of polycrystalline silicon ingots or monocrystalline silicon rods so as to allow Ga dopant in liquid phase to migrate to a liquid-solid interface; under the dual action of the electric field and solidification segregation, a Ga high-concentration area is formed in the liquid phase of a crystal growth apex so as to improve the doping concentration of subsequently growing crystals, weaken the influence of solidification segregation and obtain p-type polycrystalline ingots or p-type monocrystalline rods of which the Ga content is uniformly distributed in the crystal growth direction; the deviation range of resistivity is reduced; the yield of materials is improved, so that the production cost of silicon chips is reduced and the industrial application of Ga-doped p-type silicon chips has cost feasibility. Meanwhile, the method also applies to the p-type doping with small segregation coefficient of Al, In and the like.

Description

technical field [0001] The invention relates to a growth method of crystalline silicon, in particular to a preparation method of gallium (Ga) doped p-type crystalline silicon. Background technique [0002] Crystalline silicon solar cells (including monocrystalline and polycrystalline) are the mainstream products of photovoltaic power generation. The silicon wafers used to produce batteries are obtained from polycrystalline silicon ingots or monocrystalline silicon rod slices, so the electrical properties required by silicon wafers must be completed during the crystal growth process. Generally, during the growth process of crystalline silicon, group III elements are doped to obtain p-type silicon, and group V elements are doped to obtain n-type silicon, and the resistivity of the silicon wafer is controlled between 0.5 and 3Ω·cm by adjusting the doping concentration. Meet the requirements for preparing solar cells. As the doping of silicon, a shallow energy level must be for...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B30/02
Inventor 徐璟玉胡建锋熊斌蒋君祥戴宁褚君浩
Owner 上海太阳能电池研究与发展中心
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