Temperature compensation voltage-multiplying diode detector for ultra high frequency range

Abstract

The invention relates to a temperature compensation voltage-multiplying diode detector for an ultra high frequency range. An ultra high frequency silicon crystal audion is adopted to enable a node C and a node B to form a short circuit, and an EB node of the short circuit is utilized to form an ultra high frequency diode. Four CB nodes of the four audions separately form short circuits to form four diodes formed by the EB nodes, and every two of the four diodes are connected in series to form a double EB node voltage-multiplying detector of double-difference geminate transistors. The invention has the advantages of high upper frequency limit reaching 300 MHz or higher, low temperature drifting, good detection linearity, large dynamic range, high output detection voltage and low detection threshold value, thereby having low requirement on the output level of the system before detection and greatly widening the dynamic range of radio astronomy total strength amplitude receiving equipment.

Description

technical field [0001] The invention belongs to the field of communication reception, and in particular relates to a temperature-compensated voltage-doubling diode detector for low-frequency to ultra-high frequency bands, which is suitable for receiving equipment of a radio astronomy total intensity radiometer. Background technique [0002] In communication receiving equipment and broadcast receiving equipment, a detector is an indispensable part of high-frequency carrier modulation detection. There are many types of detectors, but the most widely used are diode detectors, especially germanium diode detectors, which are simple and inexpensive, have a low detection threshold (0.1V-0.2V), and have sufficient detection linearity. It is widely used in communication receiving equipment and broadcast receiving equipment, especially in civilian AM radios. However, its fatal disadvantage is that the temperature coefficient of the germanium diode detector is relatively large. This s...

AI Technical Summary

Problems solved by technology

However, with silicon diode detectors, although the bandwidth can be improved and the temperature drift of the detection output can be reduced by nearly an order of magnitude, the detection threshold of silicon diodes is relatively high (0.6V-0.8V), which will affect the amplification of the detector. The equipment puts forward higher output level requirements. The output level of the 1db gain compression point needs to reach 12dbm, while the germanium diode only needs to be less than 0dbm; The process of inverting the input power intensity from the voltage output value becomes complicated and must be corrected in sections, and the calculation is complicated, so it is not welcomed by observers

Low temperature drift low threshold and square law characteristics can be achieved by using more complex circuits, but most of them cannot be used in ultra-high frequency bands or when the rising rate is high, and the price is expensive and the circuit is complicated, so it is rarely used

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