Oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery

A solar cell, II-VI technology, applied in the field of solar cells, can solve the problems of high material cost, low conversion efficiency, and limited sources, and achieve the effects of low production cost, high photoelectric conversion efficiency, and low preparation temperature

Inactive Publication Date: 2010-07-28
朱忻 +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned thin film solar technologies have relatively large limitations, including relatively low conversion efficiency (amorphous silicon and cadmium telluride thin film batteries: 6-8%), toxicity (cadmium telluride thin film is a toxic element , very harmful to the human body and the environment), and the high cost of materials (the indium element in the copper indium gallium selenide film is very expensive, and indium and selenium are rare elements, and their sources are limited)

Method used

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  • Oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery
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  • Oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery

Examples

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Embodiment 1

[0043] Example 1 : Oxygen-doped ZnTe semiconductor material and preparation method thereof

[0044] This embodiment is oxygen-doped zinc telluride (ZnTe:O) and its preparation method provided by the present invention.

[0045] Oxygen-doped zinc telluride provided by the present invention is made by passing in oxygen with a pressure of 1mTorr to 1Torr at about 200°C, and mixing it with argon to form a working gas with a pressure of 10Torr to 100Torr, and sputtering with high purity (>99.9995%) The ZnTe target is formed, and the oxygen doping concentration of the prepared oxygen-doped zinc telluride is 10 18 cm -3 ~10 21 cm -3 , with a thickness of about 2000 nm.

[0046] The above preparations were completed on an Enerjet III sputtering platform (purchased from KDF, USA).

[0047] Adopt X-ray photoelectron spectroscopy (X-ray photoelectron spectroscopy, Kratos AxisUltra XPS) to measure the prepared oxygen-doped zinc telluride semiconductor material, the results are as fo...

Embodiment 2

[0048] Example 2 : Oxygen-doped zinc telluride thin film solar cell and preparation method thereof

[0049] This embodiment is an oxygen-doped zinc telluride thin-film solar cell and a preparation method thereof provided by the present invention.

[0050] The structure of the oxygen-doped zinc telluride thin film solar cell provided by the present invention is shown in FIG. 3 . The thickness of the thin-film solar cell does not exceed 10 microns, and its structural composition is detailed as follows:

[0051] The substrate (Sub) is glass or transparent plastic;

[0052] The fourth layer (EP4) is a highly conductive n-type semiconductor, specifically n-type doped zinc oxide (ZnO), or zinc magnesium oxide (ZnMgO), with a thickness of 300 nanometers and an electron concentration greater than 10 18 cm -3 , the resistivity is less than 0.05 ohm cm.

[0053] The third layer (EP3) is a buffer layer, which is zinc selenide (ZnSe) that can grow at room temperature, with a thickne...

Embodiment 3

[0066] Example 3 : Application of Oxygen-doped ZnTe Thin Film Solar Cells

[0067] This embodiment is the application of the oxygen-doped zinc telluride thin film solar cell of the present invention.

[0068] The oxygen-doped zinc telluride thin-film solar cell developed by the present invention can be widely used in the field of solar power generation, including civil and commercial rooftop power generation, power supply and charging of personal portable electronic products, medium-scale and large-scale grid-connected solar cells in suburban cities. Large-scale solar power plants, etc.

[0069] 1. Application of the solar cell of the present invention in the field of solar power generation

[0070] Oxygen-doped zinc telluride thin-film solar cells have the characteristics of easy integration, high reliability, long service life, lightness, beauty, environmental protection and low cost, ordinary residents, factories and mines, commercial building roofs, and car shells can b...

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Abstract

The invention provides an oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery. The invention validates that: the II-VI semiconductor material, such as ZnTe, ZnSe or ZnTel-xSex(0<x<1), is doped with oxygen, the conduction band is divided into two or more energy levels, therefore different spectrum is respectively absorbed and the photoelectricity conversion efficiency of the semiconductor material is greatly increased. The oxygen-doped II-VI semiconductor material is formed by spraying high-purity II-VI semiconductor material by passing over a work gas with pressure of 10Torr-100Torr mixed by oxygen with pressure of 1mTorr-1Torr and argon gas at 120-300DEG C, wherein the oxygen-doped concentration is 1018cm-3-1021cm-3 and the thickness is about 500nm-5000nm. The oxygen-doped II-VI semiconductor material does not contains poisonous material and the material chemical structure is stable and the cost is low and the oxygen-doped II-VI semiconductor material can grow on a bendable substrate at lower 200DEG C and be widely used in preparing solar energy batteries, liquid crystal display screens and thin film transistors.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to an oxygen-doped II-VI group semiconductor material, a thin film and a solar cell prepared therefrom. Background technique [0002] The energy band structure and principle of traditional semiconductors such as figure 1 As shown, where Efe is the Fermi level of electrons in semiconductor materials, and Efv is the Fermi level of semiconductor holes. When a photon with energy hv1 is absorbed by a semiconductor material, the resulting photovoltaic power output is eVout. Among them, when the energy of the photon hv1 needs to be equivalent to the bandwidth of the semiconductor material, there will be a more efficient photovoltaic conversion efficiency. That is to say, for a semiconductor material used for photoelectric conversion, its absorption of the solar spectrum will be concentrated at a certain wavelength, so its final photoelectric conversion efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04H01L31/042H01L31/073
CPCY02E10/52Y02B10/12Y02E10/543Y02P20/133
Inventor 王伟明吴庄朱忻杨军李斌
Owner 朱忻
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