Indium lanthanum titanium oxide transparent conductive film
A transparent conductive film, titanium oxide technology, applied in the field of optoelectronics, to achieve the effects of good thermal stability, good electrical conductivity, and improved device performance
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Embodiment 1
[0019] In the ZZS660 box-type high-vacuum coating machine produced by Chengdu Vacuum Machinery Factory, the electron beam deposition process is used to prepare ILTO transparent conductive film. The specific steps are as follows:
[0020] a. The glass substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the glass substrate, the temperature range is 60-400°C.
[0021] b. Fill the vacuum chamber with oxygen and argon with a purity of 99.99%, and control the volume ratio of the charged oxygen to argon to be 0.1:1 to 2:1, and use a pressure controller to control the pressure in the vacuum chamber at 7×10 -3 ~4×10 -1 within the Pa range.
[0022] c. In order to avoid the influence of the surface composition of the glass substrate on the film-forming performance of ILTO, a layer of aluminum ox...
Embodiment 2
[0029] In the vacuum coating machine, the vacuum thermal evaporation process is used to prepare the ILTO transparent conductive film. The specific steps are as follows:
[0030] a. The quartz substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the substrate at a temperature of 60-400°C.
[0031] b. Fill the vacuum chamber with high-purity oxygen and argon, and control the volume ratio of oxygen and argon to be 0.1:1 to 2:1. After filling the gas, control the pressure in the vacuum chamber to be 7×10 -3 ~4×10 -1 within the Pa range.
[0032] c. Using metal In, La and Ti as raw materials, the ILTO thin film was deposited by three-source co-evaporation, in which the evaporation rate of metal In was 0.2-3nm / s, the evaporation rate of La was 0.04-1nm / s, Ti The evaporation rate is 0.04-1nm / ...
Embodiment 3
[0034] In a magnetron sputtering vacuum coating machine, a magnetron sputtering process is used to prepare an ILTO transparent conductive film on a glass substrate. The specific steps are as follows:
[0035] a. The glass substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the glass substrate, the temperature range is 60-400°C.
[0036] b. Filling the vacuum chamber with oxygen and argon with a purity of 99.99%, controlling the volume ratio of the charged oxygen to argon to be 0.1:1 to 2:1, and controlling the pressure in the vacuum chamber to be 7×10 -3 ~4×10 -1 within the Pa range.
[0037] c. In order to avoid the influence of the surface composition of the substrate on the film-forming performance of ILTO, a layer of SiO is first grown on the substrate 2 , the thickness is 5-200nm...
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