Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing high-load tribology DLC membrane on surface of titanium

A titanium metal and tribological technology, which is applied in the field of preparation of high-performance surface films, can solve problems such as poor friction and wear properties, and achieve the effect of improving bearing capacity, high toughness, and wide application prospects

Inactive Publication Date: 2011-07-20
JIANGSU UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the invention is to invent a method for preparing high-load tribological DLC films on the surface of titanium metal against the problem that the friction and wear properties of DLC (diamond-like carbon) films are poor under high loads

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-load tribology DLC membrane on surface of titanium
  • Method for preparing high-load tribology DLC membrane on surface of titanium
  • Method for preparing high-load tribology DLC membrane on surface of titanium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as Figure 1-7 shown.

[0030] A method for preparing high-load tribology DLC (diamond-like carbon) film on titanium metal surface, it may further comprise the steps:

[0031] First, clean the titanium metal as the substrate and the SiC (silicon carbide) of the target;

[0032] Secondly, use the radio frequency magnetron sputtering method to deposit SiC on the surface of the substrate to form the SiC thin film intermediate layer;

[0033] Finally, a DLC film is formed on the SiC film intermediate layer by DC magnetron sputtering.

[0034] The cleaning of the target material and the substrate refers to removing the dirt on the surface of the substrate by means of sandpaper and polishing, and then immersing in an organic solvent (such as acetone, absolute ethanol, etc.) for ultrasonic cleaning; Put the base material into the main sputtering chamber and the sampling chamber to clean the target and substrate by radio frequency backsputtering; after the air pressure ...

Embodiment 2

[0038] Substrate Ti, intermediate layer film SiC, surface film DLC. When carrying out according to Example 1, a JGP560CVI ultra-high vacuum multifunctional magnetron sputtering apparatus is used to prepare a thin film. The background pressure when preparing SiC thin film and DLC thin film is 2.5×10 -5 Pa and substrate temperature are all at room temperature, and the target-substrate distance is 70mm. The technology used to deposit SiC thin film is radio frequency (RF) magnetron sputtering technology, the target material is SiC, the pressure of working gas (argon) is 2.1Pa, the flow rate of argon gas is 55 sccm, the sputtering power is 200W, and the sputtering time is 120min. The technology used when preparing the DLC film is direct current (DC) magnetron sputtering technology, the target material is graphite (Gr), the pressure of working gas (argon) is 1.1Pa, the flow rate of argon gas is 65sccm, and the sputtering power is 100W. Sputtering time is 120min.

[0039] The DLC...

Embodiment 3

[0044] Substrate Ti, intermediate layer film SiC, surface film DLC. When the steps described in Example 1 are carried out, a JGP560CVI ultra-high vacuum multifunctional magnetron sputtering apparatus is used to prepare a thin film. The background pressure when preparing SiC film and DLC film is 2.5×10 -5 Pa and substrate temperature are all at room temperature, and the target-substrate distance is 70 mm. The technology used to deposit SiC thin film is radio frequency (RF) magnetron sputtering technology, the target material is SiC, the pressure of working gas (argon) is 2.0Pa, the flow rate of argon gas is 65sccm, the sputtering power is 200W, and the sputtering time is 120min. The technology used when preparing the DLC film is direct current (DC) magnetron sputtering technology, the target material is graphite (Gr), the pressure of working gas (argon) is 1.0Pa, the flow rate of argon gas is 65sccm, and the sputtering power is 100W. Sputtering time is 120min.

[0045] The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
elastic modulusaaaaaaaaaa
hardnessaaaaaaaaaa
elastic modulusaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a high-load tribology DLC membrane on the surface of titanium, which is characterized by comprising the following steps: firstly, cleaning the titanium used as the base material and SiC used as the target; secondly, settling SiC on the surface of the base material by an RF magnetron sputtering method to form an SiC membrane middle layer; and at last,forming a DLC membrane on the SiC membrane middle layer by a DC magnetron sputtering method. The SiC membrane has obvious gradient element diffusion with the base material and the DLC membrane, thereby well solving the technical difficulty that the DLC membrane and the titanium have poor cohesion, and greatly enhancing the carrying capacity of an interface; at the same time, the invention enablesthe DLC membrane to have graphite phase with high mass fraction by optimizing the preparation technology, and greatly enhances the self carrying capacity of the DLC membrane. The invention well solves the preparation difficulty of the high-load tribology DLC membrane on the surface of titanium and has simple technology, thereby having wide application prospects in fields such as biology, medicine, and the like.

Description

technical field [0001] The invention relates to a method for preparing a high-performance surface film, in particular to a method for forming a DLC (diamond-like carbon) film with excellent friction characteristics on the surface of titanium metal by physical vapor deposition, specifically a method for forming a DLC (diamond-like carbon) film on the surface of titanium metal A method for preparing a high-loaded tribological DLC film on a surface. Background technique [0002] As we all know, titanium metal has many excellent properties such as high strength, small specific gravity, corrosion resistance, high temperature resistance, and low temperature resistance, and is widely used in many fields such as aerospace, weaponry, and human implants. However, its high friction coefficient and poor wear resistance seriously affect their performance. [0003] DLC (diamond-like carbon) film has become a research hotspot in recent years for metal surface protective and functional fil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06A61L27/06A61L27/30
Inventor 许晓静郝欣妮陈丹于春航邵红红付明喜宗亮王宏宇程晓农
Owner JIANGSU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com