Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions

Abstract

The invention relates to a chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions. The crystal material has a chemical formula of Cr:Er:Pr:Gd3Ga5O12. Gd2O3, Ga2O3, Er2O3, Cr2O3 and Pr2O3 of 4N are used as raw materials which are subjected to high-temperature solid-phase reaction to obtain Cr:Er:Pr:Gd3Ga5O12 raw material and used to grow the crystal by a crystal pulling method under the condition of nitrogen atmosphere. The material is used for achieving tunable laser output of 2,600 to 3,000nm waveband.

Description

Technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] Lasers in the 2.6~3.0μm band have broad application prospects in the fields of atmospheric remote sensing, infrared lidar, laser medical treatment and national defense security. Especially the mid-infrared lasers in the 3.0um~5.0μm band are the most lacking and most urgently needed light source bands. One, it has a wide range of applications in both national defense and civil use. In terms of national defense security and environmental protection, because this band or the transmission window in the atmosphere is a source of interference that must be relied on and applied in optoelectronic countermeasures and antimissile; Because of being in the "molecular fingerprint" area, it can also be used to detect chemical substances at a long distance, playing a key role in anti-chemical warfare and environmental protection. [0003] Er 3+ Ion-activated laser crystals can prod...

AI Technical Summary

Problems solved by technology

Because Er 3+ of 4 I 13 / 2 → 4 I 15 / 2 Transition produces 1.54um laser, with 4 I 11 / 2 → 4 I 13 / 2 The 2.6-3.0 μm laser generated by the transition forms a strong competition, which makes the laser threshold in the 2.6-3.0 μm band very high and the conversion efficiency is very low. 3 Ga 5 o 12 Middle Er 3+ laser upper level 4 I 11 / 2 lifetime and lower energy level 4 I 13 / 2 The lifetime is similar to that of YSGG, but Gd 3 Ga 5 o 12 Middle Er 3+ laser upper level 4 I 11 / 2 The lifetime (0.96ms) is longer than that of Er in YAG 3+ laser upper level 4 I 11 / 2 The lifetime (0.12ms) is much longer, and the lower energy level 4 I 13 / 2 The lifetime (4.8ms) is also longer than that of Er in YAG 3+ lower laser level 4 I 13 / 2 The lifetime (7.25ms) is short, so, compared to YAG, Gd 3 Ga 5 o 12 (GGG) crystals are more suitable as laser host materials in the 2.6-3.0 μm band

[0008] The focus of current research is mainly on Nd-activated GGG high-power heat-capacity laser crystals. For other activated ion-doped Gd 3 Ga 5 o 12 Laser crystals are less studied, especially for Cr 3+ :Er 3+ :Pr 3+ Doped Gd 3 Ga 5 o 12 There are no research reports on the growth, spectrum and laser performance of laser crystals at home and abroad.

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