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Method for preparing Cr doped ZnO-based diluted magnetic semiconductor film material

A technology of dilute magnetic semiconductor and thin film materials, which is applied in the application of magnetic film to substrate, the magnetism of inorganic materials, and the coating process of metal materials. It can solve the problems of complex preparation process, low repeatability, and high cost, and achieve deposition The effect of high rate, broad research value and simple preparation process

Inactive Publication Date: 2009-12-30
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention mainly solves the problems that Curie temperature above room temperature and ferromagnetism at room temperature cannot be obtained, and the preparation process of the prior art is complex, high cost, low repeatability, etc., and solves the problem that the ratio of transition metal elements is difficult to control

Method used

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  • Method for preparing Cr doped ZnO-based diluted magnetic semiconductor film material
  • Method for preparing Cr doped ZnO-based diluted magnetic semiconductor film material
  • Method for preparing Cr doped ZnO-based diluted magnetic semiconductor film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The Si substrate was ultrasonically cleaned in alcohol for 5 minutes, then washed with deionized water, dried and placed in a vacuum chamber. The distance between the substrate and the target was 55mm. The target was chromium with a purity of 99.99% and zinc oxide with a purity of 99.99%. Target co-sputtering. Vacuum to 10 -5 Pa. The working gas during the sputtering process is high-purity argon with a flow rate of 10cm 3 / min, the working pressure during the sputtering process is 10 -1 Pa. Bombard the substrate holder with an incident power of 50W for 15 minutes in an argon atmosphere to remove the oxide layer and other impurities on the surface of the substrate. Turn on the Cr target and the ZnO target so that their powers are 30W and 250W respectively, remove the baffle above the target, and start sputtering for 60 minutes and apply a DC bias of -100V to the substrate.

[0022] From figure 1 It can be seen that the prepared film is ZnO, and the M-H curve of the...

Embodiment 2

[0024]The Si substrate was ultrasonically cleaned in alcohol for 5 minutes, then washed with deionized water, dried and placed in a vacuum chamber. The distance between the substrate and the target was 55mm. The target was chromium with a purity of 99.99% and zinc oxide with a purity of 99.99%. target co-sputtering. Vacuum to 10 -5 Pa. The working gas during the sputtering process is high-purity argon with a flow rate of 10cm 3 / min, the working pressure during the sputtering process is 10 -1 Pa. Bombard the substrate holder with an incident power of 50W for 15 minutes in an argon atmosphere to remove the oxide layer and other impurities on the surface of the substrate. Turn on the Cr target and the ZnO target so that their powers are 40W and 250W respectively, remove the baffle above the target, and start sputtering for 60 minutes and apply a DC bias of -100V to the substrate.

[0025] From figure 2 It can be seen that the prepared film is ZnO, and the M-H curve of the...

Embodiment 3

[0027] The Si substrate was ultrasonically cleaned in alcohol for 5 minutes, then cleaned with deionized water, dried and placed in a vacuum chamber. The distance between the substrate and the target was 60mm. The target was chromium with a purity of 99.99% and zinc oxide with a purity of 99.99%. target co-sputtering. Vacuum to 10 -5 Pa. The working gas during the sputtering process is high-purity argon with a flow rate of 10cm 3 / min, the working pressure during the sputtering process is 10 -1 Pa. Bombard the substrate holder with an incident power of 50W for 15 minutes in an argon atmosphere to remove the oxide layer and other impurities on the surface of the substrate. Turn on the Cr target and the ZnO target so that their powers are 50W and 250W respectively, remove the baffle above the target, and start sputtering for 60 minutes and apply a DC bias of -100V to the substrate.

[0028] From image 3 It can be seen that the prepared film is ZnO, and the M-H curve of th...

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Abstract

The invention relates to a method for preparing a Cr doped ZnO-based diluted magnetic semiconductor film material, belonging to the preparation field of novel semiconductor spintronics device materials. The method adopts double targets cosputtering of chromium and zinc oxide, wherein the background vacuum degree of the system is 10<-5>Pa-10<-3>Pa; high-purity argon is used as working gas in the sputtering process; the flow rate of the high-purity argon is 5-15 cm<3> / min; the working gas pressure is 10<-2>-10<-1>Pa in the sputtering process; and the distance between a target material and a basal body is 35-70 mm. Ultrasonic cleaning is carried out on the basal body, oxide and other impurities of the surface of the basal body are removed, and the ZnO-based diluted magnetic semiconductor film materials with different doping concentrations are obtained through changing different target powers. The method has simple preparation process and high deposition rate and can obtain the diluted magnetic semiconductor film material with room-temperature ferromagnetism, high Curie temperature and controllable performance, thereby having important research value and wide application prospect.

Description

technical field [0001] The invention belongs to the field of preparation of novel semiconductor spintronic device materials, and relates to the preparation of dilute magnetic semiconductor materials, in particular to the preparation of Cr-doped ZnO-based dilute magnetic semiconductor film materials with room temperature ferromagnetism and high Curie temperature. Background technique [0002] In recent years, with the development of spintronics, dilute magnetic semiconductors (Diluted Magnetic Semi-conductors, DMSs) have received more and more attention. DMSs are generally obtained by introducing some magnetic ions into non-magnetic compound semiconductors. A new type of functional material has been formed. The exchange between magnetic ions and carriers in the semiconductor makes it have novel magneto-optical and magnetoelectric properties. DMSs can combine the performance of magnetism with the function of semiconductors, and have broad application prospects in the fields of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/18C23C14/35C23C14/06
Inventor 庞晓露高克玮杨会生王燕斌
Owner UNIV OF SCI & TECH BEIJING
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