Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphic substrate for epitaxial growth and production method thereof

A patterned substrate and epitaxial growth technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electrical solid-state devices, etc., can solve the problems of light absorption of Si substrates, which can reduce the difficulty of the manufacturing process and improve the light extraction efficiency. , the effect of releasing thermal stress

Active Publication Date: 2009-12-09
SUN YAT SEN UNIV
View PDF0 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, none of the above-mentioned techniques can solve the light absorption problem of Si substrates.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphic substrate for epitaxial growth and production method thereof
  • Graphic substrate for epitaxial growth and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] refer to figure 1 , a schematic side view of a pattern substrate for epitaxial growth, which includes a substrate 1 and an Al layer 2 on the substrate 1, and a sapphire structure layer 3 with a porous pattern structure on the Al layer 2.

[0024] Wherein, the substrate 1 may be Si, may also be an SOI substrate, may also be an AsGa substrate, may also be a GaP substrate, or may be other substrates with large absorption of visible light.

[0025] The thickness of the sapphire structure layer 3 is 100 nm-2 μm, and the thickness of the Al layer 2 is 50 nm-5 μm. The pore diameter of porous alumina is between 5 and 400nm.

[0026] Taking Si substrate as an example, figure 1 The preparation method of the shown pattern substrate comprises the following steps:

[0027] a. First clean the Si substrate 1 with a chemical solution and pure water, ultrasonic cleaning, and prepare an Al layer 2 with a thickness of 100nm to 7μm by electron beam evaporation, ion sputtering, thermal e...

Embodiment 2

[0034] Such as figure 2 As shown, this embodiment is similar to Embodiment 1, the difference is that in order to prepare a pattern substrate with better periodicity, we adopt the method of secondary anodic oxidation. To achieve this, we inserted the following steps between steps b and c of Example 1:

[0035] Use a certain concentration ratio of HgCl 2 or H 3 PO 4 or HCl or CuCl 2 Or the mixture of the above-mentioned acids, the oxide layer obtained by anodizing once is removed, leaving shallow periodic micropores on the surface, repeating step b of Example 1, and anodizing again to obtain a periodic surface pattern.

Embodiment 3

[0037] Such as figure 2 As shown, this embodiment is similar to Embodiment 1, the difference is that in order to prepare a pattern substrate with better periodicity, we use the pattern preforming method to form a shallower layer on the surface of the Al layer before anodizing the sample. pattern. To achieve this, we inserted the following steps between steps a and b of Example 1:

[0038] Electron beam lithography, multi-beam interference, ion beam etching and other methods are used to fabricate a hard film with a periodic pattern, and then the embossing method is used to form shallow periodic micropores on the surface of the Al layer. This method can form hexagonal lattice, square lattice, triangular lattice and other patterns.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor light-emitting device and a production method thereof, particularly relates to a graphic substrate for epitaxial growth and a production method thereof, comprising the following steps: a layer of Al is deposited on a baseplate; on the upper surface of the layer of Al, Al with certain thickness on the upper part of the layer of Al is converted to an Al2O3 structure with porous graphics by using an anodic oxidation method; the above mentioned structure is heated to a temperature which is above 1000 DEG C but below the melting point of Al2O3 step by step from low to high until an amorphous Al2O3 is converted to a layer of monocrystal Al2O3 and eventually a layer of sapphire structure is formed, thereby forming the baseplate, the layer of Al, a layer of sapphire structure with porous graphics from bottom to top. The production of the graphic-structure substrate does not need mask lithography process; the substrate has high reflective properties, thus the thermal stress of an epitaxial layer can be released effectively; and on the substrate, epitaxial growth is compatible with the conventional sapphire substrate epitaxial technology.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device and a manufacturing method thereof, in particular to a pattern substrate for epitaxial growth and a manufacturing method thereof. Background technique [0002] III-V compound semiconductor materials are widely used in light-emitting diodes, semiconductor lasers, detectors, and electronic devices. Due to the difficulty in preparing homogeneous epitaxial substrates, III-V nitrogen compounds mainly composed of gallium nitride (GaN) materials are generally prepared by heteroepitaxial growth methods. The substrate material and its surface properties have a great influence on the crystal quality of III-V nitrogen compounds such as heteroepitaxial GaN. Currently, due to the sapphire (Al 2 o 3 ) and silicon carbide (SiC) substrates have high temperature stability, excellent structure and surface morphology and other characteristics, so they are the main substrate materials for group III nitride ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/02
Inventor 王钢招瑜
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com