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Detection method for evaluating group III nitride single crystal surface dislocation

A detection method and nitride technology, applied in surface/boundary effects, measurement devices, preparation of test samples, etc., can solve problems such as inability to distinguish dislocation types, long period, pollution, etc., to improve performance evaluation efficiency, promote The effect of further development and accurate determination

Inactive Publication Date: 2009-12-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the main problem of this method is that the transmission electron microscope detection requires multiple processes such as sectioning, grinding, and ion thinning of the sample. The sample preparation is complicated and the cycle is long. The sample may be damaged and polluted during the sample preparation process. The sample can no longer be used for other photoelectric performance tests; and the current testing methods such as scanning electron microscopy and atomic force microscopy can only characterize the surface morphology of III-nitride single crystals after acid or alkali corrosion. dislocation density, but the type of dislocation cannot be distinguished

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  • Detection method for evaluating group III nitride single crystal surface dislocation
  • Detection method for evaluating group III nitride single crystal surface dislocation
  • Detection method for evaluating group III nitride single crystal surface dislocation

Examples

Experimental program
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Embodiment 1

[0027] The first step—precise positioning of the detection area: use the diamond probe of the nanoindenter to mark four crosses B1 (such as Figure 2a As shown), a square detection area with an area of ​​about 50×50 μm is formed, the length of the scribed line is about 2 μm, the width of the scratch is about 1 μm, and the depth is 2 μm.

[0028] The second step—scanning and characterization of the original surface morphology of the sample before corrosion: use the optical microscope configured by the atomic force microscope to locate the center of the detection area drawn by the nanoindentation instrument, and scan the area from large to small 50×50 μm, 20× Topography of 20μm, 10×10μm, 5×5μm, 2×2μm, selected as image 3 The square shown is used as the colocation test area, and the total number of dislocations in this area can be obtained as follows: image 3 15 are shown, and the area of ​​the dislocation pit with the symbol 1 is the largest, about 70.8nm 2 , and the area of...

Embodiment 2

[0035] The detection method of the present invention may also have other implementation modes, which are embodied in the precise positioning detection area mode in step 1. That is, four dots B2 (such as Figure 2b As shown), a square detection area with an area of ​​about 50×50 μm is formed, and the diameter of the etched dot is about 1 μm. Subsequent steps in this embodiment are the same as those in Embodiment 1, so details are not repeated here.

[0036] According to the steps of the above-mentioned embodiment, by wet etching the single crystal surface of the III-nitride sample combined with the co-situ observation of the atomic force microscope, the accurate determination of the dislocation type on the single crystal surface is realized, and the performance evaluation efficiency of the III-nitride-based optoelectronic device is improved. This further promotes the further development of this material in optoelectronic industries such as light-emitting diodes, and also provi...

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Abstract

The invention discloses a detection method for determining group III nitride single crystal surface dislocation type and counting density of different dislocations by accurate positioning of an atomic force microscope, belonging to the semiconductor material quality check field. The aim of the invention is realized by the following steps: a detection region is marked, the atomic force microscope is utilized to test the surface topography of the marked region, a sample is corroded for a plurality of times and the same marked detection region is tested repeatedly by the atomic force microscope after corrosion each time, corrosion rate of each corrosion dislocation pit is obtained by counting after a plurality of times of corrosions and tests, corresponding dislocation type is judged, thus counting density of different dislocations. The invention breaks through the traditional dislocation detection method by a transmission electron microscope, has simple quadrat method, accurate and efficient dislocation type determination, not only can be used in quality check of various semiconductor materials in industry to promote the development of group III nitride base photoelectric devices in photoelectric industry, but also can be applied to scientific research on film material dislocation corrosion kinetics.

Description

technical field [0001] The invention relates to a method for detecting the surface quality of semiconductor materials, in particular to a method for evaluating and detecting single crystal dislocations on the surface of group III nitrides. Background technique [0002] The atomic force microscope is an analytical instrument developed on the basis of the scanning tunneling microscope and can be used to study the surface structure of various nanomaterials including insulators. It can work in different environments such as vacuum, atmosphere and normal temperature, without special sample preparation technology, and the detection process will not damage the sample, and the resolutions in the direction parallel to and perpendicular to the sample surface can reach 0.1nm and 0.01nm respectively Resolve individual atoms with atomic-level resolution. With the continuous advancement of technology, the atomic force microscope has developed from the initial surface morphology and struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N13/16G01N1/32
Inventor 刘争晖钟海舰徐科王明月
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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