Radiation-emitting semiconductor component and method for reducing its operating voltage

Abstract

The invention provides a radiation-emitting semiconductor element and a method for reducing its operating voltage. The semiconductor element comprises: an active layer for generating radiation, a p-type conduction layer, a transparent conduction layer, and a non-p-type ohmic contact Floor. Wherein, the p-type conduction layer is formed on the active layer, the transparent conduction layer is formed on the p-type conduction layer, and the non-p-type ohmic contact layer is between the p-type conduction layer and the transparent conduction layer, and the non-p-type ohmic contact layer It is used to reduce the operating voltage of semiconductor components that emit radiation. In addition, the non-p-type ohmic contact layer provided by the present invention is an AlxGayIn(1-x-y)N quaternary alloy, and the aluminum composition contained in the above-mentioned quaternary alloy can make the energy gap of the non-p-type ohmic contact layer larger than that of the active layer, In this way, the light absorption effect of the non-p-type ohmic contact layer is reduced, thereby achieving the effect of reducing the operating voltage.

Description

technical field [0001] The invention relates to a radiation-emitting semiconductor component, in particular to a radiation-emitting semiconductor component with a reduced operating voltage. Background technique [0002] A light-emitting diode is a component made of semiconductor materials, and is a tiny solid-state light source that can convert electrical energy into light energy. Because light-emitting diodes have the characteristics and advantages of small size, long life, low driving voltage, low heat generation, low power consumption, fast response, no mercury pollution, etc. Therefore, it has become a popular electronic product in daily life. [0003] In recent years, a lot of focus has been focused on light-emitting devices formed of semiconductors mainly composed of Group III nitrides, such as gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN), etc. [0004] In a...

AI Technical Summary

Problems solved by technology

For photovoltaic components, the main technical improvement is still to find out how to make the components have a lower and more stable forward operating voltage. Therefore, the above method of using the transparent electrode layer as the surface electrode to reduce the contact resistance is still not enough

However, it is not easy to form an ohmic conductive contact layer between ITO and p-type GaN film layers

[0006] Commonly used traditional technologies to reduce contact resistance mostly use highly doped p-type contact layer as a solution, however, this highly doped p-type contact layer may cause light absorption due to the energy gap of the dopant material , and the diffusion of carriers due to too high doping concentration leads to unstable operation voltage

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