Manufacturing method of Zener diode and LED packaging device

Abstract

The invention discloses a manufacturing method of a Zener diode and an LED packaging device. A substrate is provided with a temporary carrier, and the temporary carrier comprises a first contact layer which makes contact with a substrate and a second contact layer which makes contact with Zener diodes; the Zener diodes are uniformly arranged in the second contact layer of the temporary carrier; white reflection glue coats the temporary carrier with the Zener diodes in uniform arrangement and is solidified to form a white reflection glue layer at the surface of the Zener diodes; the white reflection glue layer at the electrode surface of the Zener diodes is removed by grinding; the temporary carrier and the substrate are removed; and a single Zener diode with the reflection glue layer in the periphery is obtained by cutting. The LED packaging device comprises the Zener diode prepared by the method. The Zener diode prepared by the method can be used to effectively avoid the light absorption effect, extra packaging devices and procedures are not needed in the manufacturing process, and the yield rate of the Zener diode manufactured by the method is high.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for manufacturing a Zener diode and an LED packaging device. Background technique [0002] Zener diodes play a protective role in stabilizing voltage and preventing electrostatic breakdown in LED devices, effectively ensuring the life of LEDs. However, since the material of the zener diode is a silicon substrate, the color is dark or black, and the light is seriously absorbed near the LED chip, causing a loss of 3-5% of the luminous flux during actual use, which restricts the improvement of the LED efficiency. [0003] In order to solve the problem of the light absorption effect of the Zener diode, in the prior art, a layer of reflective material is generally covered around the Zener diode to form a reflective layer to reflect the light of the LED back, so as to reduce the absorption of light by the Zener diode. [0004] CN200910149027.6 discloses a light-emitt...

AI Technical Summary

Problems solved by technology

[0004] CN200910149027.6 discloses a light-emitting diode device, and discloses the technical content of Al or Ag, which is a reflective material around the Zener diode by evaporation or sputtering; but the method of evaporation or sputtering not only needs to use Expensive equipment, complex manufacturing process, and Zener diodes are prone to leakage, low yield rate, and high Zener cost

[0005] CN201310383351.0 discloses a light-emitting diode packaging structure and its manufacturing method, and discloses the technical content of directly coating reflective glue on the surface of Zener diodes by dispensing to form a reflective layer, but the process of dispensing Zener diodes is very difficult. It is difficult to control, and at the same time, the reflective glue is easy to cover the chip, so that the light of the chip cannot be emitted. In addition, it is necessary to add a process of dots of reflective glue and baking before dispensing, which affects production capacity and yield.

Images