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Method for preparing quantum dot light-wave conversion layer on the surface of silica-based solar cell

A solar cell, light wave conversion technology, applied in coatings, circuits, electrical components, etc., can solve the problems of low quantum efficiency, solar energy loss, etc., achieve high photoelectric conversion rate, improve photoelectric conversion efficiency, chemical and thermal stability good effect

Inactive Publication Date: 2009-10-28
上海纳晶科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The energy gap of silicon is 1.12V, crystalline silicon solar cells mainly absorb light from 400nm to 900nm, and have a very low quantum efficiency for light below 400nm (purple light and ultraviolet light), thus causing a great loss of solar energy below 400nm

Method used

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  • Method for preparing quantum dot light-wave conversion layer on the surface of silica-based solar cell
  • Method for preparing quantum dot light-wave conversion layer on the surface of silica-based solar cell
  • Method for preparing quantum dot light-wave conversion layer on the surface of silica-based solar cell

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Embodiment 1

[0034] The CdS quantum dot material is mixed into a silica sol system to obtain a quantum dot lightwave conversion composite material, and then coated on the surface of a silicon-based solar cell to form a quantum dot lightwave conversion layer. The preparation includes the following steps:

[0035] a. Preparation of silica sol

[0036] Take 10mL of ethyl orthosilicate with a concentration of 1.27mol / L, 25mL of absolute ethanol, 0.25mL of 2mol / L of hydrochloric acid, and 8mL of deionized water, and then use the hot solvent method to magnetically place the mixture in a 50℃ water bath. Stir for 3 hours to obtain a silica sol solution.

[0037] b. Preparation of CdS quantum dot nanomaterials

[0038] Take 25ml of 3.2mmol / L cadmium chloride (CdCl2·2.5H2O) solution and 10ml of 5% polyvinylpyrrolidone solution (PVP) by mass and stir at room temperature for 2 hours, then add 3.2mmol / L sodium sulfide (Na2S· 15ml of 9H2O) solution was added dropwise to the above mixed solution and stirred ...

Embodiment 2

[0046] The CdTe quantum dot material is mixed into a silica sol system to obtain a quantum dot lightwave conversion composite material, and then coated on the surface of a silicon-based solar cell to form a quantum dot lightwave conversion layer. The preparation includes the following steps:

[0047] a. Preparation of silica sol

[0048] Take 10mL of ethyl orthosilicate with a concentration of 1.27mol / L, 25mL of absolute ethanol, 0.25mL of 2mol / L of hydrochloric acid, and 8mL of deionized water, and then use the hot solvent method to magnetically place the mixture in a 50℃ water bath. Stir for 3 hours to obtain a silica sol solution.

[0049] b. Preparation of CdTe quantum dot nanomaterials

[0050] Place 0.005mol Te powder in a beaker, add 10ml (2.2×10-1mol / L) sodium borohydride (NaBH4) aqueous solution, let stand for a few minutes until the black Te powder gradually dissolves to form a colorless and transparent NaHTe aqueous solution, take 1mol After mixing 10ml of cadmium chlor...

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Abstract

The invention discloses a method for preparing a quantum dot light-wave conversion layer on the surface of a silica-based solar cell, and the method is characterized by doping CdS or CdTe quantum dot materials into silicon dioxide solrubber to obtain compound materials of quantum dot light-wave conversion layer and then coating the compound materials on the surface of the silica-based solar cell to form the quantum dot light-wave conversion layer. The method includes the preparation of silicon dioxide solrubber and quantum dot nanomaterials, synthesis of compound materials and the coating of the surface of solar cell. The method has high light transmission rate, can convert violet rays and ultraviolet light below 400 nm in sunlight into visible light within 400-700 nm, greatly improves the photoelectric conversion efficiency of the silica-based solar cell, and has the advantages of high photoelectric conversion rate of the quantum dot light-wave conversion layer, simple method and low cost compared with the prior art.

Description

Technical field [0001] The invention relates to a photoelectric composite material, in particular to a method for preparing a quantum dot light wave conversion layer on the surface of a silicon-based solar cell. Background technique [0002] Solar energy will become an important source of energy in the 21st century. The current bottleneck for the development of solar cells is mainly due to two factors: cost price and photoelectric conversion efficiency. To improve the photoelectric conversion efficiency of solar cells, it is mainly possible to optimize the device design such as incorporating the back surface field, enhancing light trapping technology, surface passivation technology, and making anti-reflection coatings to reduce surface non-absorption losses. However, the optimization of the structure of solar cell devices and the technology of anti-reflection coatings have been more mature, and there is not much room for further optimizing them to improve photoelectric conversion...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C20/08
CPCY02P70/50
Inventor 孙卓潘丽坤程祖军曹美玲林丽锋
Owner 上海纳晶科技有限公司
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