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Nano ZnO semiconductor junction array and preparation method thereof

A nano-pillar array, semiconductor technology, applied in low-dimensional nano-materials and nano fields, can solve the problems of unreported semiconductor junctions, doping, etc., and achieve the effects of low cost, good lattice matching, and improved performance

Inactive Publication Date: 2009-09-23
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most of the reported one-dimensional nanometer ZnO semiconductor junction arrays are equal-diameter nanocolumn arrays (S.F.Yu, Clement Yuen, S.P.Lau, Applied Physics Letters, 2004, 84, 3241-3243. and Y.Yang, X.W.Sun, B.K.Tay, G.F.You, S.T.Tan, and K.L.Teo, AppliedPhysics Letters, 2008, 93, 253107.), grow ZnO nano-column arrays on ZnO micro-arrays, and carry out different elements or different degrees of doping to the upper and lower ZnO column arrays Miscellaneous, the formation of semiconductor junctions has not been reported

Method used

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  • Nano ZnO semiconductor junction array and preparation method thereof
  • Nano ZnO semiconductor junction array and preparation method thereof

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Embodiment 1

[0027] 1) First, the ZnO seed layer is prepared by CVD method: uniformly mix 600mg Zn powder and 60mg C powder (mixed source), put it into an alumina boat, and place the cleaned and dried Si sheet directly above it, and the Si sheet and The vertical distance of the mixing source is 4mm. Push the alumina boat equipped with the mixed source into the horizontal tube furnace, raise the tube furnace to 760 °C at a speed of 15 °C / min, keep it for 10 min, and take out the Si sheet after the furnace temperature drops to room temperature. At this time, a seed layer required by the solution method has been deposited on the downward side of the Si sheet.

[0028] 2) Then adopt solution method to grow array or quasi-array ZnO micro-nano columns on the ZnO seed layer prepared by CVD. An equal volume of 50mM zinc nitrate [Zn(NO 3 ) 2 ·6H 2 O] and 50mM hexamethylenetetramine [C 6 h 12 N 4 ] into 80ml solution. The prepared solution was heated to 95° C. on an electromagnetically stirr...

Embodiment 2

[0032] 1) First, the ZnO seed layer is prepared by CVD method: uniformly mix 600mg of Zn powder and 50mg of C powder (mixed source), put it into an alumina boat, and place the cleaned and dried Si sheet directly above it, and the Si sheet and The vertical distance of the mixing source is 4mm. Push the alumina boat equipped with the mixed source into the horizontal tube furnace, raise the tube furnace to 750 °C at a speed of 15 °C / min, keep it warm for 5 min, and take out the Si sheet after the furnace temperature drops to room temperature. At this time, a seed layer required by the solution method has been deposited on the downward side of the Si sheet.

[0033] 2) Then adopt solution method to grow array or quasi-array ZnO micro-nano columns on the ZnO seed layer prepared by CVD. An equal volume of 50mM zinc nitrate [Zn(NO 3 ) 2 ·6H 2 O] and 50mM hexamethylenetetramine [C 6 h 12 N 4 ] into 80ml solution. Add 0.2 mmol of In to the solution 2 o 3powder. The prepared ...

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Abstract

The invention relates to a nano ZnO semiconductor junction array and a preparation method thereof, belonging to the field of low-dimensional nano materials and nano technology. The method comprises the following steps of: adopting a CVD method to prepare ZnO seed crystal on a Si substrate, and then putting the seed crystal in solution for continuous growth; carrying out heat treatment on the product grown by the solution method, cooling and then carrying out primary solution-method growth once again so as to obtain the needed product. In the two times of solution-method growth processes, the ZnO can be doped, thus realizing that the ZnO semiconductor junction is arrayed and further realizing growth of the nano ZnO array on a single ZnO micron column. The method not only can realize the growth of a ZnO homojunction array, but also can be used for growing a ZnO heterojunction array, and has low growth temperature, simple equipment and low cost.

Description

technical field [0001] The invention belongs to the field of low-dimensional nanomaterials and nanotechnology, in particular to a nano ZnO semiconductor junction array and a preparation method thereof. Background technique [0002] ZnO one-dimensional nanostructure has unique photoelectric properties, and has new potential application prospects in the fields of laser, field emission, and optoelectronic devices, so it has been extensively and deeply studied. The highly ordered ZnO nanomaterials grown on the substrate can make short-wavelength lasers (Huang M H, Mao S, Feick H, et al.Science, 2001, 292: 1897-1899.) and solar cells (Jason B. Baxter, Eray S. Aydil, Applied Physics Letters, 2005, 86, 053114.). At present, there are many methods for preparing ZnO nanoarrays, including chemical vapor deposition (CVD), electrochemical deposition, wet chemical method, and template method. Among them, the preparation of ZnO arrays by the liquid phase method has the advantages of low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82B3/00C23C16/40C04B41/50
Inventor 常永勤陆映东杨林崔兴达
Owner UNIV OF SCI & TECH BEIJING
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