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Apparatus and method for producing high-purity sulphur glass

A technology of chalcogenide glass and preparation device, applied in glass manufacturing equipment, glass furnace equipment, manufacturing tools, etc., can solve the problems of unpublished data, increase light scattering loss, reduce glass transmittance, etc., and achieve infrared transmittance Good, uniform optical quality

Active Publication Date: 2009-07-29
NINGBO UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, impurity carbon in the initial raw material, metal impurities (such as Fe, Si, Mg, Ca, Cu, etc.), SiO in the quartz ampoule 2 Particles, etc. will increase the scattering loss of light, thereby reducing the transmittance of the glass
[0004] Therefore, the purification technology of chalcogenide glass has become one of the key technologies in the preparation process of high-purity chalcogenide glass, and no relevant information has been published at home and abroad.

Method used

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  • Apparatus and method for producing high-purity sulphur glass
  • Apparatus and method for producing high-purity sulphur glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1: As shown in the figure, a high-purity chalcogenide glass preparation device includes a swing furnace body 1 and a quartz ampoule 2 with the function of swinging back and forth in the Z direction. The swing furnace body 1 is provided with a first furnace chamber 11 and a second furnace chamber. Two furnaces 12, the first furnace 11 and the second furnace 12 have independent temperature control and heating systems (not shown), respectively, the first furnace 11 and the second furnace 12 communicate with each other through the transition zone 13, and the quartz ampoule 2 includes glass raw materials The tube 21 and the purified glass tube 22, the glass raw material tube 21 and the purified glass tube 22 communicate with each other through the connecting tube 23, the glass raw material tube 21 is arranged in the first furnace 11, the purified glass tube 22 is arranged in the second furnace 12, and the connecting tube 23 is located in the transition zone 13.

Embodiment 2

[0013] Embodiment two: use the preparation device of embodiment one to prepare Ge 30 Sb 10 Se 60 Glass, the raw materials are 50 grams of germanium, antimony and selenium in proportions of 30mol%, 10mol% and 60mol% respectively, and 0.02 grams of magnesium bars are put into the glass raw material tube 21 at the same time according to the mass percentage of 0.04wt%, and the glass raw material is sealed The orifice of tube 21 is evacuated to 6 x 10 -4 Pa, seal the nozzle of the purified glass tube 22, put the vacuumed quartz ampoule 2 into the furnace, place the glass raw material tube 21 in the first furnace 11 for melting, and place the purified glass tube 22 in the second furnace 12. Raise the first furnace 11 to 250°C at a heating rate of 3°C / min, keep it warm for 2 hours, then raise it to 700°C at a heating rate of 3°C / min, keep it warm for 2 hours, and then heat it at a heating rate of 2°C / min The speed is raised to 1020°C, and kept at this temperature for 12 hours, so ...

Embodiment 3

[0014] Embodiment three: use the preparation device of embodiment one to prepare 80GeSe 2 -10Ga 2 Se 3 -10CsI glass, raw material according to GeSe 2 , Ga 2 Se 3 and CsI are respectively 80mol%, 10mol% and 10mol% proportioning 20 grams, simultaneously put 0.01 grams of magnesium bars according to mass percentage 0.05wt%, seal the nozzle of glass raw material pipe 21 after packing into glass raw material pipe 21, vacuumize up to 7×10 -4 Pa, seal the nozzle of the purified glass tube 22, put the vacuumed quartz ampoule 2 into the furnace, place the glass raw material tube 21 in the first furnace 11 for melting, and place the purified glass tube 22 in the second furnace 12. Raise the first furnace 11 to 250°C at a heating rate of 3°C / min, keep it warm for 2 hours, then raise it to 700°C at a heating rate of 2°C / min, keep it warm for 2 hours, and then heat it at a heating rate of 2°C / min Raise to 1000°C and keep it at this temperature for 12 hours, so that the swing furnace ...

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Abstract

The invention discloses a device for preparing high-purity chalcogenide glass, which is characterized by comprising a swaying furnace body with the function of swaying backwards and forwards and a quartz ampoule, wherein the swaying furnace body is provided with a first hearth and a second hearth which are provided with an independent temperature control and heating system respectively and are communicated with each other through a transition area; the quartz ampoule comprises a glass raw material tube and a purification glass tube which are communicated with each other through a connecting tube; the glass raw material tube is arranged in the first hearth; the purification glass tube is arranged in the second hearth; and the connecting tube is positioned in the transition area. The device has the advantages that one quartz ampoule provided with the glass raw material tube and the purification glass tube is arranged on the device, the glass raw material tube and the purification glass tube are placed in two hearths with different temperatures respectively, the temperature difference between the two hearths is controlled to realize the purification of glass so that the high-purity chalcogenide glass with even optical quality and good infrared light transmittance can be obtained.

Description

technical field [0001] The invention relates to the preparation of chalcogenide glass, in particular to a preparation device and method for high-purity chalcogenide glass. Background technique [0002] Chalcogenide glass is a non-oxide glass with a wide infrared transmission region (>15μm). In recent years, selenide and selenium-antimony-germanium chalcogenide glasses have been commercially used, especially in thermal imaging infrared lens materials. It is regarded as an excellent infrared material that can replace traditional germanium single crystals. [0003] However, the infrared transmittance of existing chalcogenide glass is affected by impurities in the glass, and there are oxide absorption bands of various chalcogenide glass elements above 8 μm, and these oxide absorption bands affect the far-infrared region of 8-12 μm The biggest problem with transmittance. The impurities in the glass mainly come from raw materials, raw material surfaces, quartz ampoule and sea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B5/00C03B5/235
CPCC03B2201/86C03B5/06
Inventor 聂秋华徐铁峰戴世勋沈祥王训四杨燕
Owner NINGBO UNIV
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