Doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet and crystal growth method thereof by melt method
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A technology of gallium garnet and crystal growth, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of easy cracking of GSGG, difficult laser crystal, and difficulty in output wavelength meeting application requirements.
Active Publication Date: 2011-12-14
ZHONGKE JIUYAO TECH CO LTD
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However, laser crystals based on YSGG and GSGG also have some disadvantages. For example, some dopant ions such as Nd ions have a small segregation coefficient in YSGG, which makes it relatively difficult to grow laser crystals with uniform optical quality. At the same time, in some special applications field, the output wavelength of rare earth activated ions based on YSGG and GSGG is difficult to meet the application requirements, and GSGG is easy to crack during growth, and there is a large growth core
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[0043] 1. Rare earth Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet, single rare earth doped gadolinium yttrium scandium gallium garnet compound molecular formula can be expressed as RE 3z : Gd 3x+δ Y 3(1-x-z)+δ Sc 2+δ′ Ga 3+δ″ O 12+Δ1 , Single rare earth doped gadolinium yttrium scandium gallium aluminum garnet can be expressed as RE 3z : Gd 3x+δ Y 3(1-x-z)+δ Sc 2+δ′ Ga 3(1-y)+δ″ Al 3y+δ″ O 12+Δ2 , The molecular formula of double rare earth doped gadolinium yttrium scandium gallium garnet can be expressed as RE' 3z′ RE″ 3(z-z′) : Gd 3x+δ Y 3(1-x-z)+δ Sc 2+δ′ Ga 3+δ″ O 12+Δ1 , Double rare earth doped gadolinium yttrium scandium gallium aluminum garnet can be expressed as RE' 3z′ RE″ 3(z-z′) : Gd 3x+δ Y 3(1-x-z)+δ Sc 2+δ′ Ga 3(1-y)+δ″ Al 3y+δ″ O 12+Δ2 Among them, RE, RE', RE"=Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm, and in the same material, RE, RE', E" are different, and the value ra...
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Abstract
The invention discloses doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet and their melt method crystal growth method to prepare gadolinium yttrium scandium gallium garnet and gadolinium yttrium scandium gallium aluminum garnet laser crystal RE3z:Gd3x+ δY3(1-x-z)+δSc2+δ′Ga3+δ″O12+Δ1, RE3z: Gd3x+δY3(1-x-z)+δSc2+δ′Ga3(1-y)+δ″Al3y+δ″O12+Δ2 , RE′3z′RE″3(z-z′): Gd3x+δY3(1-x-z)+δSc2+δ′Ga3+δ″O12+Δ1, RE′3z′RE″3(z-z′): Gd3x+δY3( 1-x-z)+δSc2+δ′Ga3(1-y)+δ″Al3y+δ″O12+Δ2 (RE, RE′, RE″=Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm) .Re2O3, RE'2O3, RE"2O3, Gd2O3, Y2O3, Sc2O3, Ga2O3, Al2O3, or other corresponding compounds can be used for batching; after the prepared raw materials are fully mixed, pressed and formed, or not calcined at high temperature, It becomes the starting material for crystal growth; the starting material for growth is added to the crucible and fully melted by heating to become the initial melt for crystal growth by the melt method, and the obtained crystal can be used as a solid laser working material.
Description
Technical field [0001] The present invention relates to the field of laser materials and crystal growth, invented rare earth Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet laser materials, And their melt crystal growth method. technical background [0002] The preparation of high-quality large-size, high-efficiency laser crystals is an important subject in the current solid-state laser technology field. In particular, the development of laser diodes in recent years has enabled compact, efficient, reliable, and long-life solid-state solid-state laser technology to achieve rapid development. It has been widely used in many fields and has replaced lamp-pumped solid-state lasers in many fields. Laser has had a profound impact on industrial processing, scientific research, information, medical treatment, optoelectronic countermeasures and other fields. [0003] Yttrium scandium gallium garnet YSGG an...
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