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A device for uniformly depositing cvdzns bulk materials on both sides

A block material, uniform technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problem of low production efficiency and achieve the effect of high equipment efficiency and high practical value

Active Publication Date: 2019-09-03
YUNNAN KIRO CH PHOTONICS
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  • Claims
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Problems solved by technology

The deposition period of zinc sulfide polycrystalline bulk material is generally 15 to 30 days. Due to domestic technical limitations, the deposition size generally does not exceed 400×400×20mm. Due to the limitation of deposition period and size and the influence of material processing utilization, ordinary CVD sulfide Zinc equipment can only produce 4 polycrystalline zinc sulfide bulk materials at one time, and the production efficiency is generally not high

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  • A device for uniformly depositing cvdzns bulk materials on both sides
  • A device for uniformly depositing cvdzns bulk materials on both sides
  • A device for uniformly depositing cvdzns bulk materials on both sides

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Embodiment Construction

[0017] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0018] Such as Figure 1~4 As shown, the present invention provides a double-sided uniform deposition of CVDZnS bulk material equipment, including a vacuum furnace body 17, a graphite heater 16, an outer deposition chamber 1, an inner deposition chamber 2, an outer deposition chamber support rod 10, and an inner deposition chamber Support bar 6, zinc crucible 9, zinc material weighing platform 11, zinc material weighing platform support bar 12, vacuum pipeline 18, zinc steam pipeline 8, hydrogen sulfide gas pipeline 13, first argon gas pipeline 14, second way Argon pipeline 15, vacuum regulating valv...

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Abstract

The invention provides equipment for uniformly depositing CVDZnS block materials on the two sides. The equipment adopts a unique internal and external deposition chamber structure and an integral nozzle structure provided with a gas mixing chamber, and gas flows are controlled to perform diversion from the bottom up and then from the top down by vacuumizing from the bottoms of deposition spaces, so that zinc steam and hydrogen sulfide gas are uniformly mixed and uniformly deposited along the two sides of a deposition substrate, and nine 300*300*15mm ZnS polycrystal block materials with uniform optical quality and thickness can be prepared once. Compared with common CVDZnS production equipment, the equipment is high in efficiency, has a higher practical value, and can be used for massively producing CVDZnS polycrystal block materials.

Description

technical field [0001] The invention relates to a device for producing CVDZnS block material by chemical vapor deposition method, in particular to a device for uniformly depositing CVDZnS block material on both sides. Background technique [0002] Zinc sulfide (ZnS) polycrystalline bulk material is a wide-band gap II-VI semiconductor optical material with high transmittance in the 8-12μm band, and can cover visible, mid- and far-infrared bands at the same time after hot isostatic pressing , with good multispectral properties and image transmission performance. The material has low production cost, high hardness, strong resistance to harsh environments, and excellent mechanical and optical properties. It can be used to make high-speed aircraft infrared windows, infrared imaging systems, and fairings for multi-spectral precision guidance systems. [0003] At present, chemical vapor deposition (CVD) is commonly used to prepare polycrystalline zinc sulfide bulk materials. The p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B28/14
Inventor 姜杰应飞飞王侃吴绍华子光平李茂忠张明缪彦美朱凯夏青松郭晨宇
Owner YUNNAN KIRO CH PHOTONICS
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