Low temperature sintered ZnO-MgO-TiO2 system microwave ceramic material and preparation thereof

Abstract

The invention discloses a low-temperature sintered ZnO-MgO-TiO2 system microwave ceramic material and a preparation method thereof. The formula of raw materials of the ceramic material comprises the following compositions: 30 to 45 percent of zinc oxide, 2 to 14 percent of magnesium oxide, 50 to 60 percent of titania and an auxiliary sintering agent. The preparation method comprises: taking the zinc oxide, basic magnesium carbonate and the titania as raw materials, mixing the raw materials, adding a grinding aid for ball milling, drying, sieving and presintering, and obtaining clinker; and mixing the obtained clinker with the titania, the auxiliary sintering agent and an additive, performing drying, granulation and press forming after secondary ball milling, finally sintering the mixture for 2 to 8 hours at a temperature of between 900 and 1,000 DEG C, and obtaining the ceramic material. The ceramic material prepared by the method has the advantages of superior microwave dielectric property, low sintering temperature, low cost and the like, and is suitable for microwave devices such as multi-layer ceramic capacitors, filters, resonators and dielectric antennas.

Description

technical field [0001] The invention relates to a ceramic material used in microwave electronic components and a manufacturing method thereof, in particular to a low-temperature sintered ZnO-MgO-TiO suitable for microwave devices such as high-performance microwave capacitors and filters. 2 System microwave dielectric ceramic and its preparation method. Background technique [0002] Microwave dielectric ceramics is a new type of functional electronic ceramics developed rapidly in the past 30 years. It has excellent properties such as moderate dielectric constant, low dielectric loss, and small temperature coefficient of resonance frequency, and is widely used in resonators, filters, dielectric substrates, and dielectric waveguide circuits. In recent years, with the rapid development of satellite communication and electronic technology, mobile communication equipment is developing in the direction of miniaturization, integration, high reliability, low cost, chip type, and env...

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Problems solved by technology

Zhang.Q.L et al. published in Materials Letters in 2005 that the prepared ZnTiO 3 The dielectric constant of the system reaches 27, the Q*f value is about 20,000, and the resonant frequency temperature coefficient is 2ppm / ℃, but the insulation resistance is low, which limits its application range; Chinese invention patent application CN1793025A discloses a medium temperature 1000- ZnO-MgO-TiO sintered at 1100℃ 2 microwave dielectric ceramics, but the patent uses B 2 o 3 As a sintering aid, it is easy to cause abnormal changes in the properties of the medium slurry, which affects the casting and pressing properties of the slurry; in addition, the use of expensive and relatively high resistivity Ag 70 PD 30 Internal electrode material will lead to high cost and low quality factor of the device

[0004] At present, the sintering temperature of most commercial microwave dielectric ceramics is 1200-1500°C, such as BaTi 4 o 9 、Ba 2 Ti 9 o 20 , (Zn, Sn)TiO 4 , their sintering temperature is much higher than the melting point of Cu and Ag, and it is necessary to use expensive and high-resistance Ag when using such materials to prepare laminated devices. 70 PD 30 or Ag 35 PD 65 Electrode material, high cost, high microwave loss

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