Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for moulding disc grade glass device by using micro-mould

A wafer-level, micro-mold technology, applied in glass forming, glass manufacturing equipment, manufacturing tools, etc., can solve the problems of low processing efficiency, large structural shape and size limitations, low cost, etc., and achieve high bonding strength. , good sealing effect

Inactive Publication Date: 2011-08-03
SOUTHEAST UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional wet etching process of Pyrex7740 glass is completely unable to provide microstructures with precise dimensions due to isotropic etching
If the method of DRIE is used to utilize SF 6 Gas engraving on Pyrex7740 glass requires metal Cu, Cr, etc. as a mask for etching. Not only the shape and size of the engraved structure are limited, it is impossible to achieve a large aspect ratio, but also the processing efficiency is low and the cost is high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for moulding disc grade glass device by using micro-mould
  • Method for moulding disc grade glass device by using micro-mould
  • Method for moulding disc grade glass device by using micro-mould

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for forming a wafer-level glass device with a micro-mold, characterized in that it comprises the following steps:

[0029] The first step is to etch a deep cavity of a mold with a specific structure on the polished silicon wafer in the microelectronics processing technology. In this embodiment, the first step of the microelectronics processing technology is: wet etching process, dry plasma etching process , reactive ion etching or deep reactive ion etching.

[0030] In the second step, the above-mentioned silicon wafer and the Pyrex7740 glass wafer are bonded in a vacuum environment, and the vacuum degree can be: 10 -6 10Pa, for example, 10 -5 Pa, 10 -4 Pa, 10 -3 Pa, 10 -1 Pa, 2Pa, 4Pa, 8Pa, so that the above-mentioned specific structure mold deep cavity on the silicon wafer forms a sealed cavity, and the bonding can adopt anodic bonding process, or fusion bonding and other processes, preferably anodic bonding process, The process conditions are: temperatu...

Embodiment 2

[0036] A method for forming a wafer-level glass device with a micro-mold, comprising the following steps:

[0037] In the first step, a silicon wafer (such as a 4-inch wafer) is etched to form a specific microcavity structure as a mold using a silicon micromachining process, and the micromachining process of the microcavity structure on the silicon original chip is a wet etching process, or One of the dry ICP etching process, RIE or DRIE, the pattern can be a square or circular microcavity array, or various patterns. In fact, from a three-dimensional perspective, the specific microcavity structure is a deep groove carved on a silicon wafer, and from a two-dimensional perspective, it is a pattern.

[0038] In the second step, the above-mentioned silicon wafer and the same polished Pyrex7740 glass wafer are less than 1*10 -2 Anodic bonding is carried out under the atmosphere of Pa, for example, the pressure is 0.01Pa, 0.005Pa, 0.001Pa, so that the Pyrex7740 glass and the silico...

Embodiment 3

[0044] A method for forming a wafer-level glass device using a micro-mold with a large aspect ratio glass surface microstructure, comprising the following steps:

[0045] The first step is to use the DRIE etching method to etch a specific mold structure on a 4-inch silicon wafer (in fact, from a three-dimensional view, it is a deep groove on the silicon wafer, and a two-dimensional view is a pattern), and the aspect ratio is 50. : 1, silicon wafers are polished.

[0046] In the second step, the above-mentioned silicon wafer and the same size (4 inches) Pyrex7740 glass wafer are placed in a 1*10 -3 Anodic bonding is carried out under a vacuum of Pa, so that the Pyrex7740 glass and the silicon mold cavity form a sealed cavity. The bonding surface is cleaned and polished according to the bonding requirements before anodic bonding to keep a high degree of cleanliness and minimal surface roughness.

[0047] The third step is to heat the above-mentioned bonded wafer to 850°C under ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for molding a wafer-level glass device by using a micro mold, which comprises the following steps: etching a polished silicon wafer by a micro-electronic processing technique to form a mold deep cavity with a specific structure, bonding the silicon wafer with a Pyrex7740 glass wafer under the vacuum environment so that the mold deep cavity with the specific structure on the silicon wafer forms a sealed cavity, heating the two bonded wafers under one atmospheric pressure, carrying out hot molding, forming a microstructure corresponding to the mold deep cavity with the specific structure by the softened glass due to internal and external pressure difference of the cavity, cooling the wafers, annealing the wafers and relieving stress, chemically and mechanically polishing the glass back of the thermally annealed bonding sheets, planishing the glass back of the bonding sheets, and removing a silicon mold layer by a single-side corrosion method. The method can prepare the glass microstructure with large height-width ratio (more than 50:1), has low cost, and has important application in the fields of micro-fluid device, MOEMS and the like.

Description

technical field [0001] The invention relates to a MEMS (micro-electro-mechanical system) manufacturing technology, in particular to a method for forming a disc-level glass device with a micro-mold. Background technique [0002] In the field of MEMS manufacturing technology, Pyrex7740 glass (a glass containing alkaline ions, Pyrex is a product brand of Corning Corporation in the United States) is an important material. 28*10 -7 / K, the thermal expansion coefficient of silicon is 23~40*10 -7 / K) has a similar thermal expansion coefficient, high light transmittance and high strength, and can form a high-strength bonding connection with a silicon substrate by using an anodic bonding process, and a firm Si-O is produced on the bonding surface The covalent bond is even stronger than the silicon material itself. Due to such characteristics, Pyrex7740 glass is widely used in MEMS packaging, microfluidics and MOEMS (micro-optical electro-mechanical systems) and other fields. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03B19/00
Inventor 黄庆安柳俊文尚金堂唐洁影
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com