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Low temperature production method of transparent conductive oxide film

A technology of transparent conductive film and oxide film, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problem of increasing the growth process of TCO film, which is not conducive to the growth of optoelectronic properties of TCO film materials, flexible linings, etc. The bottom is not resistant to high temperature and other problems, and the effect of selectivity, flexible preparation process and small dependence is achieved.

Inactive Publication Date: 2009-05-13
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, flexible substrates are not resistant to high temperatures, which is not conducive to the growth of TCO thin film materials with excellent optoelectronic properties. In the preparation process, it adds difficulties to the growth process of TCO thin films and poses new challenges.

Method used

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  • Low temperature production method of transparent conductive oxide film
  • Low temperature production method of transparent conductive oxide film
  • Low temperature production method of transparent conductive oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The single crystal oxide substrate material (SrTiO 3 ) was cleaned with acetone, then with ethanol, and finally ultrasonically cleaned with deionized water. After cleaning, it was blown dry with a nitrogen gun, and immediately placed in a vacuum chamber. -5 Torr; with sintered ceramic TiO 2 sheet as a target, with a purity better than 99.99% O 2 As the deposition atmosphere, the seed layer film was prepared by pulsed laser deposition method, and the control: the substrate temperature was 400-450K, and the absolute pressure of the background was lower than 5×10 -4 Torr, the laser energy density is 5J / cm 2 , with a frequency of 5 Hz, deposited O2 The divided voltage is 1×10 -3 Torr, the vertical distance between the target and the substrate is 40 mm; after the deposition process is completed, cool to room temperature with the furnace, cut off the oxygen, and take it out. The thickness of the seed layer film is controlled at 0.5 to several unit cell c-axis lengths;

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Embodiment 2

[0028] The single crystal oxide substrate material (LaAlO 3 ) was cleaned with acetone, then with ethanol, and finally ultrasonically cleaned with deionized water. After cleaning, it was blown dry with a nitrogen gun, and immediately placed in a vacuum chamber. -5 Torr; with sintered ceramic TiO 2 sheet as a target, with a purity better than 99.99% O 2 As the deposition atmosphere, the seed layer film was prepared by pulsed laser deposition method, and the control: the substrate temperature was 450-500K, and the absolute pressure of the background was lower than 5×10 -4 Torr, the laser energy density is 6J / cm 2 , with a frequency of 8 Hz, deposited O 2 The divided voltage is 1×10 -2 Torr, the vertical distance between the target and the substrate is 50 mm; after the deposition process is completed, cool to room temperature with the furnace, cut off the oxygen, and take it out. The thickness of the seed layer film is controlled at 0.5 to several unit cell c-axis lengths;

...

Embodiment 3

[0031] The single crystal oxide substrate material (SrLaAlO 4 ) was cleaned with acetone, then with ethanol, and finally ultrasonically cleaned with deionized water. After cleaning, it was blown dry with a nitrogen gun, and immediately placed in a vacuum chamber. -5 Torr; with sintered ceramic TiO 2 sheet as a target, with a purity better than 99.99% O 2 As the deposition atmosphere, the seed layer thin film was prepared by pulse laser deposition method, and the control: the substrate temperature was 420-480K, and the absolute pressure of the background was lower than 5×10 -4 Torr, the laser energy density is 7J / cm 2 , with a frequency of 3 Hz, deposited O 2 The divided voltage is 1×10 -4 Torr, the vertical distance between the target and the substrate is 45 mm; after the deposition process is completed, cool to room temperature with the furnace, cut off the oxygen, and take it out. The thickness of the seed layer film is controlled at 0.5 to several unit cell c-axis lengt...

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Abstract

The invention provides a low temperature preparation method for a transparent conductive oxide film. After a seed crystal layer is prepared through a pulsed laser method, niobium doped titanium oxide transparent conductive film material is prepared in succession respectively through the pulsed laser method or a magnetron sputtering method. The seed crystal layer can be anatase crystal type titanium oxide single-crystal. The thickness of the seed crystal layer is controlled at the length of c shafts of 0.5 to a plurality of unit cells. The titanium oxide base film material is continuously bred and prepared on the substrate material with the seed crystal layer through the pulsed laser method or the magnetron sputtering method. The preparation process has less dependency on the preparation technology and growing conditions. The preparation technology is flexible and is full of selectivity. The visible light transmission rate of the obtained titanium oxide base transparent conductive film is higher than 90 percent; and the resistivity at a room temperature is lower than 8x10<-4>ohm.cm. The method realizes the growth and preparation of the transparent conductive oxide film capable of replacing ITO.

Description

technical field [0001] The invention relates to a low-temperature preparation method of a transparent conductive oxide film, belonging to the technical field of photoelectric information materials. Background technique [0002] Transparent Conducting Oxide (TCO) thin film refers to a film with high light transmittance (>80%) and low resistivity (<1×10-3Ω·cm) for visible light (wavelength λ=380-780nm). A class of oxide thin film materials. TCO thin films are currently widely used in solar cells, screen displays, photodetectors, window coatings, low-wavelength lasers, high-density storage, optical fiber communications, and other fields. Current research and application of TCO thin films mainly focus on tin-doped indium oxide (Indium Tin Oxide: ITO) thin films. Because ITO film has the characteristics of high transmittance in the visible light region, strong infrared light reflection, low resistivity, strong adhesion to glass, good wear resistance and chemical stability...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/28C23C14/35C23C14/54
Inventor 陈同来李清文陈名海
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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