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Polishing liquid and polishing method

A technology of polishing liquid and polishing pad, applied in chemical instruments and methods, grinding/polishing equipment, machine tools for surface polishing, etc., which can solve the problems of low-k film firmness, etc.

Inactive Publication Date: 2009-04-01
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, low-k films are not as strong as conventional insulating films, and the above-mentioned problems of over-polishing and scratching also become more significant in CMP processing

Method used

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  • Polishing liquid and polishing method
  • Polishing liquid and polishing method
  • Polishing liquid and polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0171] A polishing liquid having a composition shown below was prepared, and a polishing test was performed.

[0172] Composition 1:

[0173] (1) Surface modified particles

[0174] Surface modified particles as described below 150g / L

[0175] (2) Organic acid

[0176] Citric acid 1.7g / L

[0177] (3) Specific azole compounds

[0178] 2-(1H-1,2,3-triazol-4-yl)succinic acid 1.3g / L

[0179] (4) Oxidizing agent

[0180]Hydrogen peroxide 10ml

[0181] Pure water was added to the composition having the above composition 1 to obtain a total amount of 1,000 ml, and the pH of the solution was adjusted to 6.5 using ammonia water and nitric acid.

[0182] Surface Modified Particles 1

[0183] By reacting 200 g of styrene-methacrylic acid copolymer particles (organic polymer particles) and 10 g of tetraisopropyl bis(dioctyl phosphite) titanate (a compound containing specific inorganic atoms), 100 g of raw silicon Tetraethyl acetate was added thereto to prepare surface-modified pa...

Embodiment 2 to 17 and comparative example 1 to 3

[0207] Each polishing liquid was obtained in the same manner as in the preparation of the polishing liquid of Example 1, except that Composition 1 was changed to Examples 2 to 17 and Comparative Examples 1 to 3 shown in Tables 1 and 2 below Each composition, and the pH values ​​were adjusted as shown in Tables 1 and 2 below. Using each of the obtained polishing liquids, a polishing test was performed under the same conditions as in Example 1. The results obtained are shown in Tables 1 and 2 below.

[0208]

[0209]

[0210] According to Table 1 and Table 2, when the polishing liquids of Examples 1 to 17 were used, compared with Comparative Examples 1 to 3, the polishing rate of TEOS was high, and the scratch property was excellent. On the other hand, the polishing liquids of Comparative Examples 1 to 3 were inferior in each of the TEOS polishing rate and scratch performance, compared with the polishing liquids of Examples.

[0211] From the above, it was found that the...

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Abstract

A polishing liquid is provided which is used for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including surface modified particles that include organic polymer particles having at least one inorganic atom selected from the group consisting of Ti, Al, Zr and Si bonded to the organic polymer particles via an oxygen atom present on a surface of the organic polymer particles, an organic acid, an azole compound having at least two carboxyl groups, and an oxidizing agent, the polishing liquid having a pH of from 1 to 7; and a polishing method for polishing a barrier layer of a semiconductor integrated circuit is also provided.

Description

technical field [0001] The invention relates to a polishing liquid and a polishing method. Background technique [0002] In recent years, in the development of semiconductor devices represented by semiconductor integrated circuits (hereinafter, referred to as "LSI"), for size reduction and high speed, high density and High integration. For this purpose, various techniques such as chemical mechanical polishing (hereinafter referred to as "CMP") have been employed. CMP is a necessary technology for smoothing the surface of the film to be processed, such as the interlayer insulating film, the formation of plugs, the formation of buried metal wiring, etc., and CMP is used for flattening the substrate and removing excessive metal films when forming wiring. and removing the excess barrier layer from the insulating film. [0003] A common CMP method is a method in which a polishing pad is attached to a circular polishing platen, the surface of the polishing pad is impregnated wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/321H01L21/768B24B29/02B24B37/00H01L21/304
CPCC09G1/02C09K3/1436H01L21/3212C09K3/1463C09K3/14
Inventor 斋江俊之
Owner FUJIFILM CORP
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