Method for preparing vertical structure LED using whole optical film system

Abstract

A method for preparing a light emitting diode (LED) with a vertical structure adopting an all optical film system. The method comprises the following steps: an N-type contact layer, an active area and a P-type contact layer are epitaxially grown in turn on a substrate; a device is isolated after etching; an ITO optical film is prepared on the P-type contact layer; an optical highly-reflective film is prepared on the ITO optical film, part area of which is exposed; metal films are prepared on the optical highly-reflective film and the exposed ITO optical film area so as to form a P electrode of the device; the insulated substrate is removed to expose the gallium nitride N-type contact layer; an ITO conductive optical reflection-reducing film is prepared on the surface of the gallium nitride N-type contact layer, and then undergoes surface roughening treatment; a metal electrode is prepared on the ITO conductive optical reflection-reducing film; a dielectric film is deposited on the surface of a chip so as to carry out surface passivation protection; and finally, the dielectric film in the metal electrode area is removed so as to carry out pressure welding and packaging, thereby completing the preparation of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and is a method for manufacturing a vertical structure light-emitting diode using an all-optical film system, and is especially suitable for the production of a vertical structure and a self-supporting substrate with high efficiency. Background technique [0002] High-power GaN-based LEDs can be widely used in mobile device backlight, traffic signal display, automobile and other transportation vehicle lighting, outdoor full-color information display, landscape lighting, military lighting, LCD cup light source and other fields, with high photoelectric conversion efficiency , Green environmental protection, long life, fast response, rich colors, full solidification, small size and other advantages, it is another revolution in the history of human lighting after Edison invented the incandescent lamp. In the early 1990s, blue light-emitting diodes (LEDs) based on group III nitrides were succes...

AI Technical Summary

Problems solved by technology

However, the current luminous efficiency of white LEDs is still far from the 160-200lm / w required by general lighting. Uneven current distribution, low light extraction efficiency and poor heat dissipation are the main problems facing the development of power LEDs. technical bottleneck

The vertical structure LED is a new solution based on the above problems. Compared with the traditional front-mounted structure and flip-chip structure LEDs, the vertical structure of the upper and lower electrodes can effectively solve the problems of uneven current distribution and poor heat dissipation. Optical properties, i.e. no significant improvement in extraction efficiency

Images