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Polishing liquid and polishing method using the same

A technology of polishing liquid and barrier layer, which is applied in the field of polishing liquid and can solve problems such as scratches, erosion, and depressions on polished metal surfaces

Active Publication Date: 2008-12-31
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, when a polishing liquid containing these kinds of solid abrasive grains is used in CMP processing, problems such as polishing damage (scratching), phenomenon in which the entire polishing surface is overpolished (thinning), polishing metal A phenomenon in which the surface is sunken (cavity), and a phenomenon in which the surface of multiple metal wirings is sunken due to over-polishing of an insulator placed between metal wiring layers (erosion), etc.
[0013] However, even in the polishing liquid, there is still no technique for achieving a high polishing rate when polishing a barrier layer while suppressing scratches caused by aggregation of solid abrasive grains

Method used

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  • Polishing liquid and polishing method using the same
  • Polishing liquid and polishing method using the same
  • Polishing liquid and polishing method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0187] A polishing liquid having the following formula (1) was prepared, and a polishing experiment was carried out using it.

[0188] Recipe (1)

[0189] α-alumina (Mohs hardness: 8 to 9, particle size 50nm) (polishing particles): 100g / l

[0190] Citric acid (manufactured by Wako Pure Chemical Industries, ltd.) (organic acid): 15 g / l

[0191] Benzotriazole (BTA) (corrosion inhibitor): 1g / l

[0192] Pure water was added to bring the total volume of the polishing solution to 1000ml.

[0193] As an oxidizing agent, 20 ml of hydrogen peroxide was added per 1 liter of the polishing solution.

[0194] The pH of the resulting polishing solution was adjusted to 5.0 with ammonia water and nitric acid.

[0195] Evaluation method

[0196] MA-300D (trade name, manufactured by Musashino Denshi) was used as a polishing device, and while the slurry was supplied, each wafer film shown below was polished under the following conditions:

[0197] Workbench rotation number: 112rpm

[0198...

Embodiment 2 to 45 and comparative example 1 to 10

[0210] The polishing experiment was carried out under the same conditions as those of Example 1, except that: Polishes prepared by changing the composition (1) of Example 1 to the compositions described in Tables 1 to 6 below were used. liquid. The results obtained are shown in Tables 1 to 6

[0211] The names of compounds abbreviated in Tables 1 to 6 described above are shown below:

[0212] TBA: tetrabutylammonium nitrate (cationic quaternary ammonium compound);

[0213] TMA: tetramethylammonium nitrate (cationic quaternary ammonium compound);

[0214] HMC: hexanediamine chloride (cationic quaternary ammonium compound);

[0215] BTA: 1,2,3-Benzotriazole (corrosion inhibitor);

[0216] HMBTA: 1-(hydroxymethyl)benzotriazole (corrosion inhibitor);

[0217] DCEBTA: 1-(1,2-dicarboxyethyl)benzotriazole (corrosion inhibitor);

[0218] DBSA: dodecylbenzenesulfonic acid (surfactant); and

[0219] LTM: lauryltrimethylammonium nitrate (surfactant)

[0220]

[0221]

[022...

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Abstract

The present invention provides a polishing liquid for polishing a ruthenium-containing barrier layer, the polishing liquid being used in chemical mechanical polishing for a semi-conductor device having a ruthenium-containing barrier layer and conductive metal wiring lines on a surface thereof, the polishing liquid comprising an oxidizing agent; and a polishing particulate having hardness of 5 or higher on the Mohs scale and having a composition in which a main component is other than silicon dioxide (SiO2). The present invention also provides a polishing method for chemical mechanical polishing of a semi-conductor device, the method contacting the polishing liquid with the surface of a substrate to be polished, and polishing the surface to be polished such that contacting pressure from a polishing pad to the surface to be polished is from 0.69 kPa to 20.68 kPa.

Description

technical field [0001] The invention relates to a polishing liquid used in manufacturing semiconductor devices. More specifically, the present invention relates to a polishing liquid preferably used for polishing a barrier layer of a substrate mainly using ruthenium as a barrier metal for planarization during a process of forming a wiring line on a semiconductor device. Background technique [0002] In recent years, in the development of semiconductor devices such as semiconductor integrated circuits (hereinafter, referred to as "LSI"), in order to miniaturize such devices and increase their speed, it has been sought by reducing the thickness of wiring and forming multilayer wiring. Increased density and integration. Also, in order to achieve this purpose, various techniques such as chemical mechanical polishing (hereinafter referred to as "CMP") and the like have been employed. CMP is a necessary technique for processing layers such as surface planarization of an interlay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02B24B29/00H01L21/304B24B37/04B24B37/00C09K3/14
CPCC09G1/02H01L21/3212C23F3/04C23F3/06C09K3/14
Inventor 上村哲也
Owner FUJIFILM CORP
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