Method for rapidly preparing SiC nanowire

A nanowire, fast technology, applied in the nano field, can solve the problems of difficult conditions, high cost, long cycle, etc., and achieve the effect of reducing the requirements of process conditions, reducing costs, and reducing residue pollution

Inactive Publication Date: 2008-12-24
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for rapidly preparing SiC nanowires in view of the deficiencies of the prior art, which solves the problems of complex process, high cost, long period, and difficult control of conditions in the existing SiC nanowire preparation methods

Method used

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  • Method for rapidly preparing SiC nanowire
  • Method for rapidly preparing SiC nanowire

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Embodiment 1

[0022] The method for preparing SiC nanowires in this embodiment is realized through the following steps:

[0023] a, according to the mass percentage, the SiO powder with a purity of 99.9% is 33.3%, and coke is 66.7% to mix;

[0024] b, the mixture was put into a ball mill, and ball milled at a speed of 400 rpm for 6 hours to prepare the reaction raw materials;

[0025] c. Put the reaction raw materials into a crucible made of graphite tube, place it in a sealed quartz tube, and use a vacuum pump to evacuate to 50Pa;

[0026] d. Introduce argon or nitrogen into the quartz tube, adjust the intake flow, and control the air pressure in the tube to 0.02MPa;

[0027] e. Use the high-frequency induction power coil wound outside the quartz tube to heat the graphite crucible, raise it to 1600°C within 3 minutes, and keep it warm for 20 minutes;

[0028] f. Under the protection of argon or nitrogen, cool down to room temperature with the furnace to obtain SiC nanowires.

[0029] In...

Embodiment 2

[0031] The difference between this embodiment and embodiment one is that in step a, according to the mass percentage SiO is 50%, and coke is 50%; in step b, ball milling is carried out at a speed of 400 rpm for 12 hours; in step c, vacuum is drawn to 75Pa; In d, the air pressure is controlled at 0.03MPa; in step e, the holding time is 40min. Other steps are the same as in the first embodiment.

[0032] see figure 1 , 2 In this embodiment, SiC nanowires with a diameter of 10-100 nm and a length of up to 4 microns were obtained during the reaction process of 40 minutes. All the powders were reacted to form SiC nanowires, which enabled the rapid preparation of SiC nanowires within a reaction time of 43 min.

Embodiment 3

[0034] The difference between this embodiment and embodiment one is that in step a, according to the mass percentage SiO is 66.7%, and coke is 33.3%; in step b, ball milling is performed at a speed of 400 rpm for 24 hours; in step c, the vacuum is pumped to 100Pa; In d, the air pressure is controlled at 0.04MPa; in step e, the holding time is 60min. Other steps are the same as in the first embodiment.

[0035] In this example, SiC nanowires with a diameter of 10-150 nm and a length of up to 5 microns were obtained during the reaction process of 60 minutes. All powders were reacted to form SiC nanowires, which made it possible to rapidly prepare SiC nanowires within a reaction time of 63 min.

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Abstract

The invention relates to a method for rapidly preparing a SiC nano-wire belonging to the nano technology field comprising the steps: a. mixing the 33.3%-66.7% SiO powder and the 33.3-66.7% coke according to the weight ratio; b. milling the mixture in a ball mill to prepare reacting materials; c. arranging the materials in a crucible made by graphite in a sealed quartz tube and vacuuming with a vacuum pump; d. introducing argon or nitrogen into the quartz tube and adjusting the intake flow to control the tube pressure within 0.02-0.04 MPa; e. heating the graphite crucible using a high frequency induction power wire winding around the outside of the quartz tube to 1600 DEG C in three minutes and maintaining the temperature; f. cooling the materials and the tube to the room temperature under the protection of argon or nitrogen to obtain the SiC nano-wire. The method solves the problems of complicated technology, high cost, long period, and difficult control condition in the prior art of SiC nano-wire preparation.

Description

technical field [0001] The invention relates to a method in the field of nanotechnology, in particular to a method for rapidly preparing SiC nanowires. Background technique [0002] SiC nanowires have the characteristics of high strength, high hardness, wear resistance and corrosion resistance, as well as high thermal conductivity, wide band gap and good chemical stability. Studies have shown that the hardness, elasticity, toughness and other mechanical properties of SiC nanowires are higher than those of bulk materials. Excellent mechanical properties allow it to be used as a reinforcing material in composite materials such as plastics, metals, and ceramics. The outstanding semiconductor properties determine that SiC nanowires can be used to make high-temperature, high-frequency, radiation-resistant, high-power and high-density integrated semiconductor electronic devices. At the same time, it can be used to make light-emitting devices and photodetectors for blue, green an...

Claims

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Application Information

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IPC IPC(8): C01B31/36
Inventor 张亚非王峰磊张丽英
Owner SHANGHAI JIAO TONG UNIV
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