Method for preparing room-temperature ferromagnetic Fe doped ZnO nanometer wire

Abstract

The invention discloses a method for preparing a ZnO nanowire with an adulteration of ferromagnetic Fe under a room temperature, which belongs to the field of semiconductor nanometer material preparation technology; a method of vapor deposition is adopted by the invention to carry out an original position adulteration in the process of preparing the ZnO nanowire; ZnO, C, and Fe powder are provided as evaporation sources, silicon chip is provided as a receiving lining which is placed on a corundum boat and positioned right above the evaporation and has a vertical distance of 2-4mm with the evaporation source. Then, all materials are put in a pipe typed stove where 300-350 ml / min argon is inlet; after 5-8 min, flow rate of the argon is changed to 120-160ml / min; the pipe typed stove is heated to a temperature of 950-1050 DEG C, with an internal pressure of the stove maintained at 0.03-0.05Mpa; heat preservation for 140-160 min, the stove is naturally cooled to the room temperature, thus obtaining the large scale of well distributed ZnO nanowire with the adulteration of Fe. The method solves the problem of reasonably adulterating magnetic element Fe to the ZnO nanowire; the obtained ZnO nanowire with the adulteration of ferromagnetic Fe has ferromagnetism under a room temperature. The method has the advantages that the raw materials are cheap; the technique is simple; the energy consumption is low; the productivity is high; the product is pollution free to the environment and is applicable to an industrialized production.

Description

A method for preparing ferromagnetic Fe-doped ZnO nanowires at room temperature technical field The invention belongs to the technical field of semiconductor nanomaterial preparation, and relates to a preparation technology for growing Fe-doped ZnO nanowires by chemical vapor deposition. Background technique As a source of spin carriers, the preparation of magnetic semiconductor materials has always been the most critical link in semiconductor spintronics. Whether it can maintain room temperature ferromagnetism is the key factor that determines whether it is practical. Transition group element Fe-doped ZnO is considered to be one of the most promising semiconductors with high Curie temperature, which has aroused great research interest. In addition, the magnetic semiconductor based on ZnO has wide band gap, large exciton binding energy, and obvious magneto-optical effect, so it also has broad application prospects in magneto-optical devices. With the rapid development of ...

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Problems solved by technology

The present invention adopts the method of vapor phase deposition to carry out in-situ doping in the ZnO nanowire preparation process to solve the problem of reasonably doping the magnetic element Fe in the ZnO nanowire, and forms a solid solution by replacing the position of Zn after Fe doping

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